GE Aerospace GE12047BCA3

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  • Part Number:

    GE12047BCA3

  • Manufacturer:

    GE Aerospace

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf GE12047BCA3_Datesheet

  • Description:

    SIC 2N-CH 1200V 475A MODULE

  • In stock 9
" Not available to buy online? Want the lower wholesale price? Please send RFQ, we will respond immediately
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Specifications
Type
Paramete
Type
Paramete
Operating Temperature
-55°C ~ 150°C (Tc)
Package / Case
Module
Mounting Type
Chassis Mount
Vgs(th) (Max) @ Id
4.5V @ 160mA
Configuration
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C
475A
Qualification
-
Grade
-
Gate Charge (Qg) (Max) @ Vgs
1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29300pF @ 600V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 475A, 20V
Technology
Silicon Carbide (SiC)
Power - Max
1250W
Supplier Device Package
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
FET Feature
-
Overview

DESCRIPTION

· 1200V Half-Bridge Silicon Carbide Power Module GE12090CDA3 designed for high power and high frequency applications.

· Features a VDS of 1200 V and IDS of 875 A, ensuring superior performance and power density.



FEATURES

· Utilizes highly reliable GE SiCMOSFET devices with low RDS(ON) of 1.6 mΩ.

· Incorporates low stray inductance (10 nH) and ultra-low switching losses across the entire operating range.

· Features GE Power Overlay wire-bondless technology and a body diode with minimal reverse recovery.

· Includes integrated temperature sensing, dedicated DESAT Pin, and Source-Kelvin Pin.

· Constructed with AlSiC baseplate and Si3N4 AMB substrate for enhanced durability.



APPLICATIONS

· Ideal for high power, high frequency applications requiring best-in-class power density.

· Suitable for environments requiring partial discharge free operation at high altitudes.



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