GE Aerospace GE17042CCA3

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  • Part Number:

    GE17042CCA3

  • Manufacturer:

    GE Aerospace

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf GE17042CCA3_Datesheet

  • Description:

    SIC 2N-CH 1700V 425A MODULE

  • In stock 1
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
Module
Vgs(th) (Max) @ Id
4.5V @ 160mA
Technology
Silicon Carbide (SiC)
Qualification
-
Rds On (Max) @ Id, Vgs
4.45mOhm @ 425A, 20V
Grade
-
Current - Continuous Drain (Id) @ 25°C
425A (Tc)
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Package / Case
Module
FET Feature
-
Operating Temperature
175°C (TJ)
Power - Max
1250W
Input Capacitance (Ciss) (Max) @ Vds
29100pF @ 900V
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs
1207nC @ 18V
Overview

DESCRIPTION

· 1700V Half-Bridge Silicon Carbide Power Module GE17042CCA3
· VDS: 1700 V, IDS: 425 A
· Superior performance for high power, high frequency applications
· Best-in-class power density



FEATURES

· Highly reliable GE SiC MOSFET devices
· Low RDS(ON) (3.75 mΩ) (device only)
· Low stray inductance (6 nH)
· Ultra-low switching losses over entire operating range
· Body diode with minimal reverse recovery
· Integrated temperature sensing
· Dedicated DESAT Pin and Source-Kelvin Pin
· AlSiC Baseplate and Si3N4 AMB Substrate



APPLICATIONS

· High power, high frequency applications
· Power density critical systems



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