DESCRIPTION

· The HFA3046, HFA3096, HFA3127, and HFA3128 are ultra high frequency transistor arrays fabricated using Renesas complementary bipolar UHF-1 process.

· Each array contains five dielectrically isolated transistors on a common monolithic substrate.

· NPN transistors feature an fT of 8GHz, while PNP transistors offer an fT of 5.5GHz.

· Both types exhibit low noise (3.5dB), suitable for high frequency amplifier and mixer applications.

· The HFA3046 and HFA3127 are all NPN arrays, the HFA3128 is all PNP, and the HFA3096 is an NPN-PNP combination.

· Monolithic construction ensures close electrical and thermal matching of the five transistors.

FEATURES

· NPN transistor fT: 8GHz

· NPN current gain (hFE): 130

· NPN early voltage (VA): 50V

· PNP transistor fT: 5.5GHz

· PNP current gain (hFE): 60

· PNP early voltage (VA): 20V

· Noise figure (50Ω) at 1.0GHz: 3.5dB

· Collector to collector leakage: <1pA

· Complete isolation between transistors

· Pin compatible with industry standard 3XXX series arrays

· Pb-free (RoHS compliant)

APPLICATIONS

· VHF/UHF amplifiers

· VHF/UHF mixers

· IF converters

· Synchronous detectors