HTNFET-T High Temperature N-Channel Power FET Model Information

Manufacturer and General Information:

• Manufacturer: Honeywell
• Product Line: HTMOSTM High Temperature Products
• Application Areas:

Key Features:

• Designed for extremely wide temperature range applications
• Silicon-On-Insulator (SOI) process for reduced leakage currents at high temperatures
• High DC current capability combined with low Rds-ON for both DC and switching applications
• Guaranteed performance over the entire temperature band from -55°C to +225°C
• Output Current up to 1 Amp Continuous
• Typical Input Voltage up to 60V
• 4-Pin Power-Tab Package, 8-Pin Ceramic Dip with Integral Heat Sink or Die Dimensions 4.699 x 2.286 mm

General Description:

• The HTNFET-T is a high reliability N-Channel Power FET designed for applications requiring operation in extreme temperature ranges. Fabricated using SOI technology, it is suitable for long-term operation at high temperatures with reduced leakage currents.

Electrical Characteristics and Absolute Maximum Ratings:

• Continuous Drain Current at Tj = 25°C (ID): TBD A
• Continuous Drain Current at Tj = 200°C (ID): TBD A
• Gate-To-Source Voltage (VGS): 10V
• Peak Diode Recovery (d/dt): TBD/ns
• Operating Junction Temperature (TJ): -55 to +300°C
• Storage Temperature Range (Tstg): -55 to +300°C
• Operating Power at Tj = 250°C (Pd): 50W

Thermal and Electrical Performance:

• IDSS vs Temperature Graph: Showing the variation of drain-source current with temperature at different VDS levels.
• Drain-Source Breakdown Voltage (V(BR)DSS): 55V
• On-State Drain-Source Resistance (RDS(on)): 0.4Ω at Ta=25°C with VGS = +5VDC and ID = 0.1A
• Gate Threshold Voltage (VGS(th)): 1.6 to 2.4V at Ta=25°C with VGS = VDS and ID = 100μA
• Gate-Source Forward Leakage Current (IGSS): 100nA at VGS = +5 VDC
• Gate-Source Reverse Leakage Current: -100nA at VGS = -5 VDC
• Total Gate Charge (Qg): 4.3nC
• Turn-On Delay Time (td(on)): 10s
• Rise Time (tr): 20s
• Turn-Off Delay Time (td(off)): 64s
• Fall Time (tf): 20s
• Input Capacitance (Ciss): 290pF
• Output Capacitance (Coss): 87pF
• Reverse Transfer Capacitance (Crss): 14pF

Package Information:

• 4-Pin Power-Tab Package
• 8-Pin Ceramic DIP With Heat Sink

Legal and Liability Notice:

• Honeywell reserves the right to make changes to any products or technology to improve reliability, function, or design.
• Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.