Vishay IRFL110

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  • Part Number:

    IRFL110

  • Manufacturer:

    Vishay

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf IRFL110_Datesheet

  • Description:

    MOSFET N-CH 100V 1.5A SOT223

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Operating Temperature
-55°C ~ 150°C (TJ)
Qualification
-
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta), 3.1W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Vgs (Max)
±20V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs(th) (Max) @ Id
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
Mounting Type
Surface Mount
Grade
-
Rds On (Max) @ Id, Vgs
540mOhm @ 900mA, 10V
Overview

IRFL110 Power MOSFET

Overview:
The IRFL110 is a third-generation power MOSFET from Vishay Siliconix, designed for fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It is available in a surface-mount SOT-223 package, suitable for vapor phase, infrared, or wave soldering techniques. The package design allows for easy automatic pick-and-place and improved thermal performance due to an enlarged tab for heatsinking.

Key Features:

  • Surface-mount capability
  • Available in tape and reel
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Material categorization for compliance definitions

Absolute Maximum Ratings:

  • Drain-source voltage (VDS): 100V
  • Gate-source voltage (VGS): ±20V
  • Continuous drain current at 25°C (ID): 1.5A
  • Pulsed drain current (IDM): 12A
  • Maximum power dissipation at 25°C (PD): 3.1W
  • Operating junction and storage temperature range (TJ, Tstg): -55 to +150°C

Thermal Resistance Ratings:

  • Maximum junction-to-ambient (PCB mount) (RthJA): 60°C/W
  • Maximum junction-to-case (drain) (RthJC): 40°C

Electrical Characteristics:

  • Drain-source on-state resistance (RDS(on)) at VGS = 10V: 0.54Ω
  • Input capacitance (Ciss): 180pF
  • Output capacitance (Coss): 81pF
  • Reverse transfer capacitance (Crss): 15pF
  • Total gate charge (Qg) at VGS = 10V: 8.3nC
  • Gate-source charge (Qgs): 2.3nC
  • Gate-drain charge (Qgd): 3.8nC

Drain-Source Body Diode Characteristics:

  • Continuous source-drain diode current: 1.5A
  • Pulsed diode forward current (ISM): 12A
  • Body diode voltage (VSD) at TJ = 25°C, IS = 1.5A: 2.5V
  • Body diode reverse recovery time (trr): 100 to 200ns
  • Body diode reverse recovery charge (Qrr): 0.44 to 0.88μC

Package Information:

  • Package type: SOT-223
  • Lead-free and halogen-free options available

Ordering Information:

  • SiHFL110TR-GE3, SiHFL110TR-BE3
  • IRFL110TRPBF-BE3, IRFL110TRPbF
  • Lead-free: IRFL110TRPbF

Disclaimer:
All product specifications and data are subject to change without notice. Vishay disclaims any and all liability for any errors, inaccuracies, or incompleteness contained in any datasheet or other disclosure. Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose. It is the customer's responsibility to validate the suitability of a particular product for use in a specific application.

Contact Information:
For technical questions, contact: [email protected]

Document References:

  • Document Number: 91192
  • Revision Date: 20-Dec-2021
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