Infineon Technologies IRLML6401TRPBF

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  • Part Number:

    IRLML6401TRPBF

  • Manufacturer:

    Infineon Technologies

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf IRLML6401TRPBF_Datesheet

  • Description:

    MOSFET P-CH 12V 4.3A SOT23

  • In stock 64,421
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Specifications
Type
Paramete
Type
Paramete
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
950mV @ 250µA
Rds On (Max) @ Id, Vgs
50mOhm @ 4.3A, 4.5V
Power Dissipation (Max)
1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 10 V
Vgs (Max)
±8V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
Grade
-
Mounting Type
Surface Mount
Supplier Device Package
Micro3™/SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Qualification
-
Drain to Source Voltage (Vdss)
12 V
Overview

IRLML6401TRPBF - HEXFET Power MOSFET for Battery and Load Management

Overview

The IRLML6401TRPBF is a P-Channel HEXFET Power MOSFET designed for battery and load management applications. It features an ultra-low on-resistance and is available in a thermally enhanced Micro3™ (SOT-23) package, making it ideal for space-constrained environments.

Key Specifications

  • Part Number: IRLML6401TRPBF
  • Package: Micro3™ (SOT-23)
  • Ordering Code: Tape and Reel (3000 units)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Drain-Source Characteristics

  • Drain-Source Voltage (VDS): -12 V
  • Continuous Drain Current (ID) @ TA = 25°C, VGS @ -4.5V: -4.3 A
  • Continuous Drain Current (ID) @ TA = 70°C, VGS @ -4.5V: -3.4 A
  • Pulsed Drain Current (IDM): -34 A
  • Power Dissipation (PD) @ TA = 25°C: 1.3 W
  • Power Dissipation (PD) @ TA = 70°C: 0.8 W

Gate Characteristics

  • Gate-to-Source Voltage (VGS): ±8.0 V
  • Gate Threshold Voltage (VGS(th)): -0.40 to -0.95 V

On-Resistance (RDS(on))

  • VGS = -2.5V, ID = -2.5A: ≤ 0.085 Ω
  • VGS = -1.8V, ID = -2.0A: ≤ 0.125 Ω

Diode Characteristics (Body Diode)

  • Diode Forward Voltage (VSD): -1.2 V at TJ = 25°C, IS = -1.3A, VGS = 0V
  • Reverse Recovery Time (trr): 22 to 33 ns at TJ = 25°C, IF = -1.3A
  • Reverse Recovery Charge (Qrr): 8.0 to 12 nC at di/dt = -100A/μs

Thermal Characteristics

  • Maximum Junction-to-Ambient Thermal Resistance (RθJA): 75 to 100 °C/W
  • Junction and Storage Temperature Range (TJ, TSTG): -55°C to +150°C

Switching Characteristics

  • Turn-On Delay Time (td(on)): ≤ 11 ns
  • Rise Time (tr): ≤ 32 ns
  • Turn-Off Delay Time (td(off)): ≤ 250 ns
  • Fall Time (tf): ≤ 210 ns

Capacitance

  • Input Capacitance (Ciss): ≤ 830 pF
  • Output Capacitance (Coss): ≤ 180 pF
  • Reverse Transfer Capacitance (Crss): ≤ 125 pF

Package Information

  • Dimensions: Conforms to JEDEC Outline TO-236AB
  • Lead-Free: Yes
  • RoHS Compliant: Yes
  • Halogen-Free: Yes

Applications

  • Battery Management: Ideal for battery management systems requiring high efficiency and low on-resistance.
  • Load Management: Suitable for load management applications where space is limited.
  • Portable Electronics: Fits well in portable devices and thin applications like PCMCIA cards.

Ordering Information

  • Part Number: IRLML6401TRPBF
  • Package: Micro3™ (SOT-23)
  • Quantity: 3000 units / Tape and Reel
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