IXYS IXFK30N50Q

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  • Part Number:

    IXFK30N50Q

  • Manufacturer:

    IXYS

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf IXFK30N50Q_Datesheet

  • Description:

    MOSFET N-CH 500V 30A TO264AA

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Rds On (Max) @ Id, Vgs
160mOhm @ 15A, 10V
Package / Case
TO-264-3, TO-264AA
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
FET Type
N-Channel
Grade
-
Vgs(th) (Max) @ Id
4.5V @ 4mA
Drain to Source Voltage (Vdss)
500 V
FET Feature
-
Power Dissipation (Max)
416W (Tc)
Qualification
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3950 pF @ 25 V
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Technology
MOSFET (Metal Oxide)
Overview

IXFK30N50Q: High-Performance N-Channel Power MOSFET


Product Overview:


The IXFK30N50Q is a high-performance N-Channel enhancement mode power MOSFET manufactured by IXYS Corporation. It is favored in the industrial and power electronics sectors for its exceptional performance and reliability. This MOSFET is known for its low internal resistance, high voltage tolerance, and fast switching characteristics, making it suitable for applications requiring high power density and efficiency.


Key Features:


  • Low Qg Process: IXYS's advanced low Qg process technology ensures that the IXFK30N50Q has low gate charge and capacitance, making it easier to drive and switch faster.
  • International Standard Packages: Available in various international standard packages such as PLUS 247TM and TO-264 AA, catering to different application scenarios.
  • Low RDS(on): With only 0.16 ohms at VGS of 10V and ID of 0.5 ID25, it ensures low power consumption and high efficiency.
  • Unclamped Inductive Switching (UIS) Rated: This MOSFET has passed UIS testing, making it suitable for switching applications that may encounter inductive loads.
  • UL 94 V-0 Flame Retardant Rating: The packaging materials meet the UL 94 V-0 flame retardancy standard, ensuring product safety and reliability.


Electrical Characteristics:


  • Maximum Drain-Source Voltage (VDSS): 500V, suitable for high-voltage applications.
  • Gate-Source Voltage (VGS): Continuous ±20V, transient ±30V.
  • Maximum Drain Current (ID25): 30A at 25°C.
  • Maximum Pulse Current (IDM): 120A at 25°C, pulse width limited by the maximum junction temperature (TJM).
  • Maximum Power Dissipation (PD): 416W at 25°C.


Application Areas:


The IXFK30N50Q, with its high efficiency and power density, is suitable for a variety of demanding power electronic applications, including but not limited to:

  • Switching Power Supplies: Used for efficient power conversion.
  • Motor Control: Provides precise current control in motor driving and control.
  • Solar Inverters: Achieves efficient energy conversion in solar power generation systems.
  • Electric Vehicles: Plays a role in battery management and motor control in electric vehicles.



Packaging Options:


  • PLUS 247TM: Suitable for clip or spring mounting, offering space savings and high power density.
  • TO-264 AA: Provides a standard packaging option for a wide range of industrial applications.


Conclusion:


With its outstanding performance and reliability, the IXFK30N50Q has become a star product in the field of power MOSFETs from IXYS Corporation. Whether in high-voltage, high-current, or fast-switching applications, the IXFK30N50Q provides stable and efficient solutions. Choosing the IXFK30N50Q means choosing a reliable and efficient power electronics partner.

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