Microchip Technology MSCSM120DDUM16TBL3NG

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  • Part Number:

    MSCSM120DDUM16TBL3NG

  • Manufacturer:

    Microchip Technology

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf MSCSM120DDUM16TBL3NG_Datesheet

  • Description:

    SIC 4N-CH 1200V 150A

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
-
Rds On (Max) @ Id, Vgs
16mOhm @ 80A, 20V
FET Feature
-
Vgs(th) (Max) @ Id
2.8V @ 6mA
Package / Case
Module
Qualification
-
Input Capacitance (Ciss) (Max) @ Vds
6040pF @ 1000V
Configuration
4 N-Channel, Common Source
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Technology
Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs
464nC @ 20V
Mounting Type
Chassis Mount
Grade
-
Power - Max
560W
Current - Continuous Drain (Id) @ 25°C
150A
Operating Temperature
-55°C ~ 175°C (TJ)
Overview

DESCRIPTION

· The MSCSM120DDUM16TBL3NG is a double dual common source 1200V, 150A SiC MOSFET power module.



FEATURES

· 1200V voltage rating.

· 150A current rating.

· Silicon carbide (SiC) technology.

· Double dual common source configuration.



APPLICATIONS

· High-power switching applications.

· Power conversion systems.

· Renewable energy systems.

· Industrial motor drives.

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