Name: XP3700MT
Brand: YAGEO XSEMI
SKU: JM-XP3700MT
Availability: InStock

YAGEO XSEMI XP3700MT

View All FET, MOSFET Arrays by YAGEO XSEMI

Part Number:
XP3700MT
Manufacturer:
YAGEO XSEMI
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
XP3700MT_Datesheet
Description:
MOSFET N AND P-CH 30V 11A 7.3A
In stock 1,000

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Specifications

Type

Paramete

Type

Paramete

Package / Case

8-PowerLDFN

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

2V @ 250µA

Grade

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 4.5V, 9.6nC @ 4.5V

Operating Temperature

-55°C ~ 150°C (TJ)

Configuration

N and P-Channel

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 15V, 960pF @ 15V

FET Feature

Drain to Source Voltage (Vdss)

30V

Supplier Device Package

PMPAK® 5 x 6

Rds On (Max) @ Id, Vgs

18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V

Power - Max

3.57W (Ta)

Qualification

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 7.3A(Ta)

Mounting Type

Surface Mount

Overview

DESCRIPTION

· XP3700 series MOSFETs feature innovative design and silicon process technology for low on-resistance and fast switching performance.

· Designed for high efficiency in a wide range of power applications.

· Utilizes PMPAK®5x6 package optimized for voltage conversion applications with standard infrared reflow technique and backside heat sink for enhanced thermal performance.

FEATURES

· Simple drive requirements for both N-channel and P-channel enhancement mode power MOSFETs.

· N-channel: BV DSS 30V, RDS(ON) 18mΩ, ID 311A.

· P-channel: BV DSS -30V, RDS(ON) 45mΩ, ID 3-7.3A.

· RoHS compliant and halogen-free.

· Excellent thermal performance with Rthj-c of 7.2℃/W and Rthj-a of 35℃/W.

APPLICATIONS

· Suitable for a wide range of power applications requiring high efficiency and fast switching.

· Ideal for voltage conversion applications utilizing the PMPAK®5x6 package.

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