0912GN-15E Model Information

Product Overview

• Model: 0912GN-15E
• Frequency Range: 960-1215 MHz
• Output Power: 15 Watts
• Bias Voltage: 50 Volts
• Pulsing Characteristics: 128us, 10%
• Applications: General Purpose Driver for IFF, Mode-S, DME, TACAN, TCAS avionics applications

Key Features

• Frequency Range: 960-1215 MHz
• Pulsed Output Power: 15W
• Pulsing: 128us, 10%
• Common Source Configuration
• Class AB Operation
• Bias Voltage: 50VDD
• Efficiency: >60%
• Typical Power Gain: 18.1 dB
• Gain Flatness: 0.2 dB
• Compact Size
• Package Options: 55-QQ (E), 55-QQP (EL), 55-78029 (EP)
• High Reliability: All gold metallization and eutectic die attach
• Small Footprint Plug & Play Pallets Available

Case Outlines

• 55-QQ (E): Dimensions 0.160” x 0.550”
• 55-QQP (EL): Dimensions 0.160” x 0.230”
• 55-78029 (EP): Dimensions 0.600” x 1.200”

Absolute Maximum Ratings

• Maximum Power Dissipation: 37 W @ 25°C
• Drain-Source Voltage (VDSS): 150 V
• Gate-Source Voltage (VGS): -8 to +0 V
• Storage Temperature (TSTG): -55 to +125 °C
• Operating Junction Temperature: +200 °C

Electrical Characteristics @ 25°C

• Output Power (POUT):Min: 15 WTyp: 19 WTest Conditions: PIN=0.32W, Freq=960,1090,1215 MHz
• Power Gain (GP):Min: 17.5 dBTyp: 18.1 dBTest Conditions: PIN=0.32W, Freq=960,1090,1215 MHz
• Drain Efficiency (ηD):Min: 60%Typ: 65%Test Conditions: PIN=0.32W, Freq=960,1090,1215 MHz
• Droop:Min: 0.1 dBMax: 0.5 dBTest Conditions: PIN=0.32W, Freq=960,1090,1215 MHz
• Load Mismatch Tolerance (VSWR-T): 5:1 @ 1090 MHz

Functional Characteristics @ 25°C

• Drain Leakage Current (ID(Off)):Max: 1.0 mATest Conditions: VGS = -8V, VD = 50V
• Gate Leakage Current (IG(Off)):Max: 0.2 mATest Conditions: VGS = -8V, VD = 0V

Typical Broadband Performance Data – 128us, 10% Pulsing

• Frequency: 960 MHz, 1090 MHz, 1215 MHz
• Input Power (PIN): 320 mW
• Output Power (POUT):960 MHz: 20.5 W1090 MHz: 20.9 W1215 MHz: 18.2 W
• Drain Current (ID):960 MHz: 68 mA1090 MHz: 76 mA1215 MHz: 78 mA
• Return Loss (IRL):960 MHz: -9.3 dB1090 MHz: -9.2 dB1215 MHz: -13.5 dB
• Drain Efficiency (ηD):960 MHz: 71%1090 MHz: 63%1215 MHz: 62%
• Power Gain (GP):960 MHz: 18.1 dB1090 MHz: 18.2 dB1215 MHz: 18.2 dB
• Droop:960 MHz: 0.2 dB1090 MHz: 0.2 dB1215 MHz: 0.3 dB

Package Dimensions

• 55-QQ (E): Dimensions 0.160” x 0.550”
• 55-QQP (EL): Dimensions 0.160” x 0.230”
• 55-78029 (EP): Dimensions 0.600” x 1.200”

Important Notes

• Bias Condition: VDD=+50V, Idq=10mA constant current (VGS= -2.0 ~ -4.5V typical)
• Export Classification: EAR-99
• Test Fixture Available: Upon request

Legal and Warranty Information

• Warranty: Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose.
• Liability: Microsemi assumes no liability arising out of the application or use of any product or circuit.
• Testing: Products have been subject to limited testing and should not be used in mission-critical equipment or applications.
• Responsibility: It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same.
• Information Provided: “As is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer.
• Intellectual Property: Microsemi does not grant any patent rights, licenses, or any other IP rights.