Microsemi Part Number: 0912GN-50LE
Sheet Title: 50 W GaN Transistor – 960–1215 MHz, Class-AB, Earless Driver

1. Product Overview

• Device Type: E-Class, earless-driver GaN transistor
• Frequency Range: 960 – 1215 MHz
• Output Power (Pulsed): 50 W minimum, 58 W typical (PIN = 1.5 W)
• Bias Voltage: VDD = +50 V
• Quiescent Current: IDQ = 20 mA (constant-current bias)
• Gate Bias (typ): VGS = –2.0 V to –4.5 V
• Package Style: 55-QQ ceramic earless flange (2-plug)

2. Key Performance @ 25 °C

3. Absolute Maximum Ratings

• Drain-Source Voltage (VDSS): 150 V
• Gate-Source Voltage (VGS): –8 V to 0 V
• Device Dissipation @ 25 °C: 100 W
• Storage Temperature (TSTG): –55 °C to +125 °C
• Operating Junction Temperature (TJ): +200 °C

4. Functional Characteristics @ 25 °C

TableCopy

5. Typical Pulsed Data

MIDS burst (6.4 µs on / 13 µs off, 256 pulses, 21 % DF)

6. Package Information

• Package Name: 55-QQ (earless)
• Outline: 0.160" × 0.550" (4.06 × 13.97 mm)
• Pin-out:– Pin-1: Drain– Pin-2: Source– Pin-3: Gate
• Materials: All-gold metallization, eutectic die attach for highest reliability

7. Applications

• IFF, Mode-S, DME, TACAN, TCAS
• Avionics secondary radars
• General 960–1215 MHz pulsed transmit chains

8. Export Classification

• EAR-99 (no ITAR control)