Vishay 10BQ100

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Specifications
Type
Paramete
Type
Paramete
Reverse Recovery Time (trr)
-
Technology
Schottky
Supplier Device Package
DO-214AA (SMB)
Current - Average Rectified (Io)
1A
Operating Temperature - Junction
-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)
100 V
Mounting Type
Surface Mount
Voltage - Forward (Vf) (Max) @ If
780 mV @ 1 A
Current - Reverse Leakage @ Vr
500 µA @ 100 V
Grade
-
Package / Case
DO-214AA, SMB
Qualification
-
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
-
Overview

Part Number 10BQ100PbF Information

Basic Information

  • Part Number: 10BQ100PbF
  • Product Name: Schottky Rectifier
  • Package Type: SMB (Surface Mount)
  • Revision: A
  • Manufacturer: Vishay Intertechnology, Inc.
  • Website: Vishay
  • Document Number: 94114

Major Ratings and Characteristics

  • IF(AV) Rectangular waveform: 1.0 A
  • VRRM: 100 V
  • IFSM @ tp = 5 µs sine: 780 A
  • VF @1.0 Apk, TJ=125°C: 0.62 V
  • TJ range: -55 to 175 °C

Description/Features

  • Small Footprint: Surface mountable
  • Low Forward Voltage Drop: Ensures high efficiency
  • High Frequency Operation: Suitable for high-speed applications
  • Guard Ring: Enhances ruggedness and long-term reliability
  • Lead-Free: Pb-Free ("PbF" suffix)

Electrical Specifications

Voltage Ratings

  • VR Max. DC Reverse Voltage: 100 V
  • VRWM Max. Working Peak Reverse Voltage: 100 V
  • VFM Max. Forward Voltage Drop:0.78 V @ 1A0.89 V @ 2A0.62 V @ 1A (TJ = 125°C)0.72 V @ 2A (TJ = 125°C)

Reverse Leakage Current

  • IRM Max. Reverse Leakage Current:0.5 mA (TJ = 25°C)1 mA (TJ = 125°C)

Junction Capacitance

  • CT Typical Junction Capacitance: 42 pF (VR = 5VDC, test signal range 100kHz to 1MHz, 25°C)

Series Inductance

  • LS Typical Series Inductance: 2.0 nH (Measured lead to lead 5mm from package body)

Voltage Rate of Charge

  • dv/dt Max. Voltage Rate of Charge: 10,000 V/µs

Surge Current

  • IFSM Max. Peak One Cycle Non-Repetitive Surge Current:780 A (5µs Sine or 3µs Rect. pulse)38 A (10ms Sine or 6ms Rect. pulse)

Avalanche Energy

  • EAS Non-Repetitive Avalanche Energy: 1.0 mJ (TJ = 25°C, IAS = 0.5A, L = 8mH)

Repetitive Avalanche Current

  • IAR Repetitive Avalanche Current: 0.5 A (Current decaying linearly to zero in 1 µsec, Frequency limited by TJ max. Va = 1.5 x Vr typical)

Thermal-Mechanical Specifications

  • TJ Max. Junction Temperature Range: -55 to 175 °C
  • Tstg Max. Storage Temperature Range: -55 to 175 °C
  • RthJL Max. Thermal Resistance Junction to Lead: 36 °C/W (DC operation)
  • RthJA Max. Thermal Resistance Junction to Ambient: 80 °C/W
  • Approximate Weight: 0.10 g (0.003 oz.)

Ordering Information

  • Device Code: 10BQ100PbF
  • Ordering Part Numbers:10BQ100PbF: Box (1000 pieces)10BQ100PbFTR: Tape & Reel (3000 pieces)

Mechanical Dimensions (SMB)


SYMBOLMillimeters (Min.)Millimeters (Max.)Inches (Min.)Inches (Max.)
A3.303.940.1300.155
B4.064.700.1600.185
C1.802.200.0710.087
D0.1520.3050.0060.012
E4.805.590.1890.220
F2.102.600.0830.102
G0.0510.2030.0020.008
H0.761.520.0300.060

Marking Diagram

  • Device Marking: IR1J
  • Identification:First Row: IR (Manufacturer) and Part Number (indicates current, voltage rating, and Schottky Generation)Second Row: Year, Week of manufacturing, and Site ID

Applications

  • Disk Drives
  • Switching Power Supplies
  • Converters
  • Free-Wheeling Diodes
  • Battery Charging
  • Reverse Battery Protection

Legal Disclaimer

  • The information provided is subject to change without notice.
  • Vishay Intertechnology, Inc., assumes no responsibility or liability for any errors or inaccuracies.
  • No license is granted to any intellectual property rights.
  • The products are not designed for use in medical, life-saving, or life-sustaining applications.
  • Trademarks and registered trademarks are noted in the document.


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