Vishay 10MQ040N

View All Single, Pre-Biased Bipolar Transistors by Vishay

Part Number:
10MQ040N
Manufacturer:
Vishay
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
10MQ040N_Datesheet
Description:
DIODE SCHOTTKY 40V 2.1A DO214AC
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Specifications

Type

Paramete

Type

Paramete

Grade

Operating Temperature - Junction

-55°C ~ 150°C

Technology

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Voltage - DC Reverse (Vr) (Max)

40 V

Qualification

Reverse Recovery Time (trr)

Supplier Device Package

DO-214AC (SMA)

Capacitance @ Vr, F

Current - Reverse Leakage @ Vr

500 µA @ 40 V

Package / Case

DO-214AC, SMA

Voltage - Forward (Vf) (Max) @ If

540 mV @ 1 A

Current - Average Rectified (Io)

2.1A

Mounting Type

Surface Mount

Overview

Part Number 10MQ040NPbF Information

Basic Information

Part Number: 10MQ040NPbF
Product Name: Schottky Rectifier
Package Type: SMA (Surface Mount)
Revision: A
Manufacturer: Vishay Intertechnology, Inc.
Website: Vishay
Document Number: 94117

Major Ratings and Characteristics

IF DC: 2.1 A
VRRM: 40 V
IFSM @ tp = 5 µs sine: 120 A
VF @1.5Apk, TJ=125°C: 0.56 V
TJ range: -55 to 150 °C

Description/Features

Small Footprint: Surface mountable
Low Forward Voltage Drop: Ensures high efficiency
High Frequency Operation: Suitable for high-speed applications
Guard Ring: Enhances ruggedness and long-term reliability
Lead-Free: Pb-Free ("PbF" suffix)

Electrical Specifications

Voltage Ratings

VR Max. DC Reverse Voltage: 40 V
VRWM Max. Working Peak Reverse Voltage: 40 V
VFM Max. Forward Voltage Drop:0.54 V @ 1A0.62 V @ 1.5A0.49 V @ 1A (TJ = 125°C)0.56 V @ 1.5A (TJ = 125°C)

Reverse Leakage Current

IRM Max. Reverse Leakage Current:0.5 mA (TJ = 25°C)26 mA (TJ = 125°C)

Junction Capacitance

CT Typical Junction Capacitance: 38 pF (VR = 10VDC, TJ = 25°C, test signal = 1MHz)

Series Inductance

LS Typical Series Inductance: 2.0 nH (Measured lead to lead 5mm from package body)

Voltage Rate of Charge

dv/dt Max. Voltage Rate of Change: 10,000 V/µs

Surge Current

IFSM Max. Peak One Cycle Non-Repetitive Surge Current:120 A (5µs Sine or 3µs Rect. pulse)30 A (10ms Sine or 6ms Rect. pulse)

Avalanche Energy

EAS Non-Repetitive Avalanche Energy: 3.0 mJ (TJ = 25°C, IAS = 1A, L = 6mH)

Repetitive Avalanche Current

IAR Repetitive Avalanche Current: 1.0 A

Thermal-Mechanical Specifications

TJ Max. Junction Temperature Range: -55 to 150 °C
Tstg Max. Storage Temperature Range: -55 to 150 °C
RthJA Max. Thermal Resistance Junction to Ambient: 80 °C/W
Approximate Weight: 0.07 g (0.002 oz.)

Ordering Information

Device Code: 10MQ040NPbF
Ordering Part Numbers:10MQ040NPbF: Box (1000 pieces)10MQ040NPbFTR: Tape & Reel (7500 pieces)

Mechanical Dimensions (SMA)

SYMBOL	Millimeters (Min.)	Millimeters (Max.)	Inches (Min.)	Inches (Max.)
A	2.50	2.90	0.098	0.114
B	4.00	4.60	0.157	0.181
C	1.40	1.60	0.055	0.062
D	0.152	0.305	0.006	0.012
E	2.00	2.44	0.078	0.096
F	0.76	1.52	0.030	0.060
G	0.103	0.203	0.004	0.008
H	4.80	5.28	0.188	0.208

Marking Diagram

Device Marking: IR1F
Identification:First Row: IR (Manufacturer) and Part Number (indicates current, voltage rating, and Schottky Generation)Second Row: Year, Week of manufacturing, and Site ID

Applications

Disk Drives
Switching Power Supplies
Converters
Free-Wheeling Diodes
Battery Charging
Reverse Battery Protection

Legal Disclaimer

The information provided is subject to change without notice.
Vishay Intertechnology, Inc., assumes no responsibility or liability for any errors or inaccuracies.
No license is granted to any intellectual property rights.
The products are not designed for use in medical, life-saving, or life-sustaining applications.
Trademarks and registered trademarks are noted in the document.

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