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Model 1214GN-400LV Information Summary

The 1214GN-400LV is a high-performance transistor designed for L-band surveillance radar transmitter output stages. This document provides a comprehensive summary of its key specifications and characteristics.

General Description

The 1214GN-400LV is an internally matched, common source, class AB GaN on SiC HEMT transistor. It delivers over 16dB gain and 400 Watts of pulsed RF output power at a 4.5ms pulse width and 30% duty cycle across the 1200 to 1400 MHz band. The transistor features internal pre-match for optimal performance and is hermetically sealed with all gold metallization, ensuring high performance, reliability, and ruggedness.

Case Outline

• Package Type: 55-KR
• Configuration: Common Source

Absolute Maximum Ratings

• Maximum Power Dissipation: 800 W (Device Dissipation @ 25°C)
• Drain-Source Voltage (VDSS): 150 V
• Gate-Source Voltage (VGS): -8 to +0 V
• Temperature Ranges:Storage Temperature (TSTG): -55 to +125 °COperating Junction Temperature: +250 °C

Electrical Characteristics (@ 25°C)

• Output Power (Pout):Test Conditions: Pout=400W, Freq=1200, 1300, 1400 MHzValue: 400 W
• Power Gain (Gp):Test Conditions: Pout=400W, Freq=1200, 1300, 1400 MHzRange: 16 to 16.8 dB
• Drain Efficiency (ηd):Test Conditions: Pout=400W, Freq=1200, 1300, 1400 MHzRange: 60 to 68%
• Droop (Dr):Test Conditions: Pout=400W, Freq=1200, 1300, 1400 MHzValue: 0.6 dB
• Load Mismatch Tolerance (VSWR-T):Test Conditions: Pout=400W, Freq=1200 MHzValue: 3:1
• Thermal Resistance (Өjc):Test Conditions: Pulse Width=4.5ms, Duty=30%Value: 0.3 °C/W
• Bias Condition: Vdd=+50V, Idq=200mA average current (Vgs= -2.0 ~ -4.5V ) with constant gate bias

Functional Characteristics (@ 25°C)

• Drain Leakage Current (ID(Off)):Test Conditions: VgS = -8V, VD = 50VValue: 16.8 mA
• Gate Leakage Current (IG(Off)):Test Conditions: VgS = -8V, VD = 0VValue: 2 mA
• Drain-Source Breakdown Voltage (BVDSS):Test Conditions: Vgs =-8V, ID = 28mAValue: 150 V

Typical Performance Data

• Frequency (GHz): 1.2, 1.3, 1.4
• Input Power (Pin) (W): 8.9
• Output Power (Pout) (W): 443 (1.2 GHz), 461 (1.3 GHz), 444 (1.4 GHz)
• Drain Current (Id) (A): 3.67 (1.2 GHz), 4.05 (1.3 GHz), 3.82 (1.4 GHz)
• Return Loss (RL) (dB): -8.1 (1.2 GHz), -19 (1.3 GHz), -7.8 (1.4 GHz)
• Efficiency (Eff) (%): 72% (1.2 GHz), 68% (1.3 GHz), 68% (1.4 GHz)
• Gain (G) (dB): 16.97 (1.2 GHz), 17.12 (1.3 GHz), 16.98 (1.4 GHz)
• Droop (dB): 0.11 (1.2 GHz), 0.24 (1.3 GHz), 0.21 (1.4 GHz)

Transistor Impedance Information

• Frequency (GHz): 1.2, 1.3, 1.4
• Input Impedance (Zs): 2.25-j1.89 (1.2 GHz), 2.15-j1.25 (1.3 GHz), 2.04-j0.61 (1.4 GHz)
• Output Impedance (ZLoad): 0.36 - j0.19 (1.2 GHz), 0.24 + j0.36 (1.3 GHz), 0.18 + j0.9 (1.4 GHz)

Package Dimensions

• A: 370 to 372 mil (9.40 to 9.44 mm)
• B: 498 to 500 mil (12.65 to 12.7 mm)
• C: 700 to 702 mil (17.78 to 17.83 mm)
• D: 830 to 832 mil (21.08 to 21.13 mm)
• E: 1030 to 1032 mil (26.16 to 26.21 mm)
• F: 86 to 116 mil (2.18 to 2.946 mm)
• G: 136 to 166 mil (3.45 to 4.22 mm)
• H: 385 to 387 mil (9.78 to 9.83 mm)
• I: 130 to 132 mil (3.30 to 3.35 mm)
• J: 003 to 004 mil (0.076 to 0.10 mm)
• K: 120 to 144 mil (3.04 to 3.66 mm)
• L: 100 to 114 mil (2.54 to 2.90 mm)
• M: 080 to 90 mil (2.03 to 2.29 mm)
• N: 065 to 66 mil (1.65 to 1.68 mm)

Export Classification

• Export Classification: EAR -99