2729GN-300V Technical Specifications

General Description

The 2729GN-300V is an internally matched, common source, class AB, GaN on SiC HEMT transistor designed for S-band pulsed surveillance radar applications. It offers over 14.5 dB gain and 300 Watts of pulsed RF output power at a 100µs pulse width and 11% duty cycle across the 2700 to 2900 MHz band. The device uses all gold transistor metallization for high reliability and superior ruggedness.

Key Features

• Output Power: 300 Watts pulsed RF output power
• Frequency Range: 2700 to 2900 MHz
• Pulse Width: 100µs
• Duty Cycle: 11%
• Gain: Over 14.5 dB
• Drain Efficiency: 50% to 58%
• Thermal Resistance: 0.37°C/W
• Package: 55-QP Common Source

Absolute Maximum Ratings

• Maximum Power Dissipation: 740 W
• Device Dissipation @ 25°C: 740 W
• Drain-Source Voltage (VDSS): 125 V
• Gate-Source Voltage (VGS): -8 to +0 V
• Storage Temperature (TSTG): -55 to +125°C
• Operating Junction Temperature: +250°C

Electrical Characteristics @ 25°C

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Functional Characteristics @ 25°C

• ID(Off): Drain leakage current (VgS = -8V, VD = 125V) | 48 mA
• IG(Off): Gate leakage current (VgS = -8V, VD = 0V) | 8 mA

Bias Condition

• Vdd: +50V
• Idq: 75mA constant current (Vgs = -2.0 to -4.5V typical)

Typical Broad Band Performance Data

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Package Dimensions (55-QP Common Source)

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Ordering Information

• Part Number: 2729GN-300V
• Package: 55-QP Common Source
• Output Power: 300 Watts
• Frequency Range: 2700 to 2900 MHz
• Pulse Width: 100µs
• Duty Cycle: 11%