2729GN-300VP Model Information

General Description

• Model: 2729GN-300VP
• Frequency Range: 2700 - 2900 MHz
• Output Power: 300 Watts
• Bias Voltage: 50 Volts
• Pulsing Characteristics: 100 µs, 11%
• Applications: S-Band Primary Pulsed Surveillance Radar Systems

Key Features

• Internally Matched: Common Source, Class AB, GaN on SiC HEMT transistor
• Output Power: 300 Watts pulsed RF output power
• Gain: Over 14.5 dB
• Frequency Band: 2700 MHz to 2900 MHz
• Pulse Width: 100 µs
• Duty Cycle: 11%
• High Reliability: All gold transistor metallization
• Hermetically Sealed: Designed for S-band pulsed surveillance radar applications
• Pallet Construction: Best manufacturing practices for high quality and reliability

Case Outline

• Package Type: 55-QP
• Dimensions: 1.030” x 0.385”

Absolute Maximum Ratings

• Maximum Power Dissipation: 740 W @ 25°C
• Drain-Source Voltage (VDSS): 125 V
• Gate-Source Voltage (VGS): -8 to +0 V
• Storage Temperature (TSTG): -55 to +125 °C
• Operating Junction Temperature: +250 °C

Electrical Characteristics @ 25°C

• Output Power (POUT):Min: 300 WTyp: 335 WTest Conditions: PIN = 10W, Freq=2700, 2900 MHz
• Power Gain (GP):Min: 14.5 dBTyp: 15.3 dBTest Conditions: PIN = 10W, Freq=2700, 2900 MHz
• Drain Efficiency (ηD):Min: 50%Typ: 58%Test Conditions: PIN = 10W, Freq=2700, 2900 MHz
• Droop:Min: 0.2 dBMax: 0.50 dBTest Conditions: PIN = 10W, Freq=2700, 2900 MHz
• Thermal Resistance (ӨJC):Typ: 0.37 °C/WTest Conditions: Pulse Width=100uS, Duty=11%

Functional Characteristics @ 25°C

• Drain Leakage Current (ID(Off)):Max: 48 mATest Conditions: VgS = -8V, VD = 125V
• Gate Leakage Current (IG(Off)):Max: 8 mATest Conditions: VgS = -8V, VD = 0V

Typical Broadband Performance Data

• Frequency: 2700 MHz, 2900 MHz
• Input Power (Pin): 10 W
• Output Power (Pout):2700 MHz: 333 W2900 MHz: 378 W
• Drain Current (Id):2700 MHz: 1.82 A2900 MHz: 1.90 A
• Return Loss (RL):2700 MHz: -13.0 dB2900 MHz: -16.0 dB
• Drain Efficiency (Nd):2700 MHz: 57%2900 MHz: 62%
• Power Gain (G):2700 MHz: 15.2 dB2900 MHz: 15.8 dB
• Droop:2700 MHz: 0.10 dB2900 MHz: 0.15 dB

Package Dimensions

• 55-QP PACKAGE DIMENSION:A: 370 - 372 mil (9.40 - 9.44 mm)B: 498 - 500 mil (12.65 - 12.7 mm)C: 700 - 702 mil (17.78 - 17.83 mm)D: 830 - 832 mil (21.08 - 21.13 mm)E: 1030 - 1032 mil (26.16 - 26.21 mm)F: 101 - 102 mil (2.56 - 2.59 mm)G: 151 - 152 mil (3.84 - 3.86 mm)H: 385 - 387 mil (9.78 - 9.83 mm)I: 130 - 132 mil (3.30 - 3.35 mm)J: 003 - 004 mil (0.076 - 0.10 mm)K: 135 - 137 mil (3.43 - 3.48 mm)L: 105 - 107 mil (2.67 - 2.72 mm)M: 085 - 086 mil (2.16 - 2.18 mm)N: 065 - 066 mil (1.65 - 1.68 mm)

Important Notes

• Bias Condition: Vdd=+50V, Idq=75mA constant current (Vgs= -2.0 ~ -4.5V typical)
• Export Classification: Information not provided in the document
• Test Fixture Availability: Information not provided in the document