2N7002_NB9G002 N-Channel Enhancement Mode Field Effect Transistor Data Sheet

Overview

• Part Number: 2N7002_NB9G002
• Type: N-Channel Enhancement Mode Field Effect Transistor (FET)

General Description and Features

• Produced using Fairchild's proprietary, high cell density, DMOS technology
• Designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance
• Suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications
• Features include high density cell design for low RDS(ON), voltage controlled small signal switch, rugged and reliable operation, and high saturation current capability

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

• Drain-Source Voltage (VDSS): 60 V
• Drain-Gate Voltage (VDGR): 60 V (RGS < 1 MΩ)
• Gate-Source Voltage (VGSS): ±20 V (Continuous), ±40 V (Non-Repetitive, tp < 50µs)
• Maximum Drain Current (ID): 115 mA (Continuous), 800 mA (Pulsed)
• Maximum Power Dissipation (PD): 200 mW
• Operating and Storage Temperature Range (TJ, TSTG): -65 to 150°C
• Maximum Lead Temperature for Soldering Purposes (TL): 300°C for 10 seconds at 1/16" from case

Thermal Characteristics

• Thermal Resistance, Junction-to-Ambient (RθJA): 625 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

OFF CHARACTERISTICS

• Drain-Source Breakdown Voltage (BVDSS): 60 V (VGS = 0 V, ID = 10 µA)
• Zero Gate Voltage Drain Current (IDSS): 1 µA (VDS = 48 V, VGS= 0 V) for 2N7000, 1 µA (TJ=125°C) for 2N7002, 1 µA (TJ=125°C) for NDS7002A
• Gate-Body Leakage, Forward (IGSSF): 10 nA (VGS = 15 V, VDS = 0 V) for 2N7000, 100 nA (VGS = 20 V, VDS = 0 V) for 2N7002, 100 nA (VGS = 20 V, VDS = 0 V) for NDS7002A
• Gate-Body Leakage, Reverse (IGSSR): -10 nA (VGS = -15 V, VDS = 0 V) for 2N7000, -100 nA (VGS = -20 V, VDS = 0 V) for 2N7002, -100 nA (VGS = -20 V, VDS = 0 V) for NDS7002A

ON CHARACTERISTICS

• Gate Threshold Voltage (VGS(th)): 1 V to 2.5 V (VDS = VGS, ID = 250 µA) for 2N7002, NDS7002A
• Static Drain-Source On-Resistance (RDS(ON)): 1.2 Ω to 7.5 Ω (VGS = 10 V, ID = 500 mA) for 2N7002, 1.2 Ω to 13.5 Ω (VGS = 10 V, ID = 500 mA) for NDS7002A

DYNAMIC CHARACTERISTICS

• Input Capacitance (Ciss): 20 pF to 50 pF (VDS = 25 V, VGS = 0 V, f = 1.0 MHz)
• Output Capacitance (Coss): 11 pF to 25 pF
• Reverse Transfer Capacitance (Crss): 4 pF to 5 pF
• Turn-On Time (ton): 10 ns to 20 ns (VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25 Ω)
• Turn-Off Time (toff): 10 ns to 20 ns (VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25 Ω)

Drain-Source Diode Characteristics and Maximum Ratings

• Maximum Continuous Drain-Source Diode Forward Current (IS): 115 mA for 2N7002, 280 mA for NDS7002A
• Maximum Pulsed Drain-Source Diode Forward Current (ISM): 0.8 A for 2N7002, 1.5 A for NDS7002A
• Drain-Source Diode Forward Voltage (VSD): 0.88 V to 1.5 V (VGS = 0 V, IS = 115 mA for 2N7002, IS = 400 mA for NDS7002A)