Diodes Incorporated 2N7002DW-7-F

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Specifications
Type
Paramete
Type
Paramete
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
230mA
Drain to Source Voltage (Vdss)
60V
Rds On (Max) @ Id, Vgs
7.5Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs
-
Power - Max
310mW
Vgs(th) (Max) @ Id
2V @ 250µA
FET Feature
-
Qualification
-
Configuration
2 N-Channel (Dual)
Grade
-
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Overview

Data Sheet Summary for 2N7002DW-7-F

General Description

The 2N7002DW-7-F is a dual N-channel enhancement mode MOSFET tailored for high-efficiency power management applications. It boasts low on-state resistance (RDS(ON)) and excellent switching performance, rendering it apt for motor control and power management functions.

Key Features

•Dual N-Channel MOSFET

•Low On-Resistance: Reduces power loss to a minimum

•Low Gate Threshold Voltage: Ensures efficient operation at low voltages

•Low Input Capacitance: Minimizes switching losses

•Fast Switching Speed: Ideal for high-frequency applications

•Low Input/Output Leakage: Boosts reliability

•Ultra-Small Surface Mount Package: SOT363

•Lead-Free & RoHS Compliant: Environmentally friendly

•Halogen and Antimony Free: Meets "Green" device standards

•Automotive Grade Available: Qualified to AEC-Q100/101/200 standards

Electrical Characteristics (@ TA = +25°C)

•Drain-Source Voltage (VDS): 60V

•Gate-Source Voltage (VGS): ±20V (continuous), ±40V (pulsed)

•Continuous Drain Current (ID): 0.23A @ VGS = 5V, 0.18A @ TA = +70°C, 0.14A @ TA = +100°C

•Pulsed Drain Current (IDM): 0.8A (10µs pulse, 1% duty cycle)

•On-State Drain-Source Resistance (RDS(ON)): 3.2Ω @ TJ = +25°C, 7.5Ω @ VGS = 5V, 13.5Ω @ TJ = +125°C

•Gate Threshold Voltage (VGS(TH)): 1.0V to 2.0V

Thermal Characteristics (@ TA = +25°C)

•Total Power Dissipation (PD): 0.31W @ TA = +25°C, 0.2W @ TA = +70°C, 0.12W @ TA = +100°C

•Thermal Resistance, Junction to Ambient (RθJA): 410°C/W @ TA = +25°C, 318°C/W @ TA = +70°C

•Thermal Resistance, Junction to Case (RθJC): 135°C/W

Operating and Storage Temperature Range

•TJ, TSTG: -55°C to +150°C

Mechanical Data

•Package: SOT363

•Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0

•Moisture Sensitivity: Level 1 per J-STD-020

•Terminals: Matte Tin Finish Annealed over Alloy 42 Lead-Frame (Lead Free Plating)

•Weight: 0.006 grams (Approximate)

Ordering Information

•Part Number: 2N7002DW-7-F

•Package: SOT363 (Standard)

•Packing: 3,000 pcs per Tape & Reel

Marking Information

•Date Code Key:Year: 2004 to 2030 (Code: R to S)Month: January to December (Code: 1 to D)

•Product Type Marking Code: K72

•Date Code Marking: YM (Y = Year, M = Month)

Package Outline Dimensions

•A1: 0.00 to 0.10 mm (0.05 mm typical)

•A2: 0.80 to 1.00 mm (0.90 mm typical)

•b: 0.10 to 0.35 mm (0.225 mm typical)

•c: 0.08 to 0.22 mm (0.15 mm typical)

•D: 1.80 to 2.20 mm (2.00 mm typical)

•E: 2.00 to 2.45 mm (2.225 mm typical)

•E1: 1.15 to 1.35 mm (1.25 mm typical)

•e: 0.65 mm (fixed)

•F: 0.25 to 0.45 mm (0.35 mm typical)

•L: 0.25 to 0.46 mm (0.355 mm typical)

•a: 0° to 8° (angle)

Suggested Pad Layout

•C: 0.650 mm

•G: 1.300 mm

•X: 0.420 mm

•Y: 0.600 mm

•Y1: 2.500 mm

Important Notice

•Warranty: There is no warranty of any kind, express or implied, concerning the information in this document.

•Application Liability: Customers are responsible for selecting suitable products and ensuring compliance with legal and regulatory requirements.

•Intellectual Property: No license is granted under any of Diodes' intellectual property rights.

•Terms and Conditions: Products are provided subject to Diodes' Standard Terms and Conditions of Sale.

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