Sanyo 2SK1896

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Specifications
Type
Paramete
Type
Paramete
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
-
Drain to Source Voltage (Vdss)
-
Supplier Device Package
-
Current - Continuous Drain (Id) @ 25°C
-
Power Dissipation (Max)
-
Rds On (Max) @ Id, Vgs
-
FET Feature
-
Qualification
-
FET Type
-
Grade
-
Technology
-
Vgs (Max)
-
Mounting Type
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package / Case
-
Overview

2SK1896 N-Channel Silicon MOSFET Datasheet Summary


1. General Overview

The 2SK1896 is an N-channel silicon MOSFET manufactured by SANYO Semiconductors, specifically designed for high-performance applications such as DC-DC converters and motor drives. Key features include ultra-low on-resistance, ultrahigh-speed switching capabilities, low-voltage drive requirements, and a micaless TO-220ML package that facilitates easy mounting. With a maximum drain-to-source voltage of 60V and a continuous drain current of 15A, this device balances power handling and efficiency, making it suitable for battery-powered equipment, industrial control systems, and automotive auxiliary circuits. The datasheet information is based on specifications as of June 1999, with ordering number EN4647.


2. Key Specifications


2.1 Absolute Maximum Ratings (Ta = 25°C)

表格


ParameterSymbolConditionsRatingUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGSS-±20V
Continuous Drain Current (DC)ID-15A
Pulsed Drain CurrentIDPPulse width = 10µs, Duty cycle = 1%60A
Allowable Power DissipationPDTa = 25°C2.0W
PDTc = 25°C25W
Channel TemperatureTch-150°C
Storage Temperature RangeTstg--55 to +150°C

2.2 Electrical Characteristics (Ta = 25°C)

表格


ParameterSymbolConditionsMinTypMaxUnit
Drain-to-Source Breakdown VoltageBVDSIG = 1mA, VGS = 0V60--V
Gate-to-Source Breakdown VoltageBVGSID = -100µA, VDS = 0V-20--V
Zero-Gate-Voltage Drain CurrentIDSSVDS = 60V, VGS = 0V--100µA
Gate-to-Source Leakage CurrentIGSSVGS = ±16V, VDS = 0V-1-1µA
Threshold VoltageVGS(off)ID = 1mA, VDS = 10V1.0-2.0V
Forward Transfer AdmittanceID = 9A, VDS = 10V13.8--S
On-State Drain-to-Source ResistanceRDS(on)ID = 9A, VGS = 10V-0.0570.070Ω
RDS(on)ID = 9A, VGS = 4V-0.0590.070Ω
Input CapacitanceCissVDS = 20V, f = 1MHz--1230pF
Output CapacitanceCossVDS = 20V, f = 1MHz--330pF
Reverse Transfer CapacitanceCrssVDS = 20V, f = 1MHz--65pF
Turn-On Delay Timetd(on)See test circuit--14ns
Rise TimetrSee test circuit--35ns
Turn-Off Delay Timetd(off)See test circuit--250ns
Fall TimetfSee test circuit--120ns
Drain Forward VoltageVDSID = 15A, VGS = 0V-1.01.5V

3. Package & Mechanical Details


3.1 Package Type


  • Package: TO-220ML (micaless, easy-mount design)
  • Pin Configuration (Top View):
  • Exposed Pad: Not specified (standard TO-220ML typically includes a drain-connected heatsink pad for thermal management)

3.2 Package Dimensions (Unit: mm)


  • Key dimensions conform to TO-220ML standard specifications (detailed in datasheet drawing 2063A):

4. Functional Features


4.1 Core Performance Advantages


  • Low On-Resistance: As low as 0.057Ω (typ) at VGS = 10V, minimizing conduction losses and improving power efficiency.
  • Ultrahigh-Speed Switching: Fast turn-on (14ns) and fall (120ns) times enable high-frequency operation in DC-DC converters (ideal for >1MHz switching frequencies).
  • Low-Voltage Drive: Threshold voltage of 1.0-2.0V allows compatibility with low-voltage control circuits (e.g., 3.3V or 5V microcontroller outputs).
  • High Current Handling: 15A continuous drain current and 60A pulsed current support high-power loads such as small motors and power supplies.

4.2 Thermal Performance


  • The TO-220ML package provides a thermal resistance (θJA) suitable for natural convection cooling; derating of power dissipation is required for ambient temperatures above 25°C (refer to PD-Ta characteristic curve in datasheet).
  • Maximum channel temperature of 150°C ensures robustness in high-temperature environments (e.g., industrial enclosures).

5. Application Information


5.1 Target Applications


  • DC-DC converters (step-up/step-down)
  • Motor drive circuits (brushed DC motors)
  • Power management modules
  • Industrial control systems
  • Automotive auxiliary electronics (non-critical systems)

5.2 Test Circuits & Characteristics


  • Switching Time Test Circuit: VDD = 30V, RLoad = 3.33Ω, VGS = 3.5V (detailed in datasheet Figure 1)
  • Key Characteristic Curves:

5.3 Recommended Operating Conditions


  • Gate Drive Voltage: 4V-10V (optimal for minimizing RDS(on))
  • Operating Temperature Range: -40°C to +125°C (derated current above 25°C)
  • Drain-Source Voltage: ≤50V (for margin below 60V maximum rating)

6. Ordering & Compliance


  • Ordering Number: EN4647
  • Part Number: 2SK1896
  • Manufacturer: SANYO Semiconductors
  • Compliance Notes:

7. Safety & Reliability


  • Absolute Maximum Ratings: Exceeding these values (even momentarily) may cause permanent device damage or reduced reliability.
  • ESD Protection: Standard ESD handling procedures recommended (no specific HBM/CDM ratings provided in datasheet).
  • Soldering Recommendations: Follow standard TO-220 soldering practices (e.g., 260°C for 3±0.5 seconds in reflow; 320°C for 3±0.5 seconds for hand soldering) to avoid package/lead damage.
  • Mounting: Use appropriate heatsinking for high-power applications (Tc = 25°C rating requires adequate thermal coupling to heatsink).


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