Name: AO4800BL
Brand: Alpha Wire
SKU: JM-AO4800BL
Availability: InStock

Alpha Wire AO4800BL

View All FET, MOSFET Arrays by Alpha Wire

Part Number:
AO4800BL
Manufacturer:
Alpha Wire
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
AO4800BL_Datesheet
Description:
MOSFET 2N-CH 30V 6.9A 8SOIC
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Grade

Configuration

2 N-Channel (Dual)

FET Feature

Rds On (Max) @ Id, Vgs

27mOhm @ 6.9A, 10V

Mounting Type

Surface Mount

Power - Max

1.9W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id

1.5V @ 250µA

Current - Continuous Drain (Id) @ 25°C

6.9A (Ta)

Drain to Source Voltage (Vdss)

30V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V

Package / Case

8-SOIC (0.154", 3.90mm Width)

Qualification

Supplier Device Package

8-SOIC

Overview

DESCRIPTION

· The AO4800B is a 30V dual N-Channel MOSFET utilizing advanced trench technology for enhanced performance.
· It features excellent R DS(ON) and low gate charge, making it suitable for efficient switching applications.
· The device is designed for use in compact and efficient switch and synchronous rectifier combinations, particularly in buck converters.

FEATURES

· Drain-Source Voltage (VDS) of 30V.
· Continuous Drain Current (ID) of 6.9A at VGS=10V.
· Low R DS(ON): <27mΩ at VGS=10V, <32mΩ at VGS=4.5V, and <50mΩ at VGS=2.5V.
· 100% UIS and Rg tested for reliability.
· Maximum Junction-to-Ambient Thermal Resistance (RθJA) of 62.5°C/W.

APPLICATIONS

· Ideal for use in DC-DC converters and power management systems.
· Suitable for synchronous rectification in switching power supplies.
· Effective in applications requiring high efficiency and compact design, such as portable electronics and computing devices.

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