Alpha Wire AO4606

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Specifications
Type
Paramete
Type
Paramete
Grade
-
Input Capacitance (Ciss) (Max) @ Vds
310pF @ 15V, 760pF @ 15V
Drain to Source Voltage (Vdss)
30V
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V, 16nC @ 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Current - Continuous Drain (Id) @ 25°C
6A (Ta), 6.5A (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Power - Max
2W
FET Feature
-
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
Qualification
-
Supplier Device Package
8-SOIC
Operating Temperature
-55°C ~ 150°C
Configuration
N and P-Channel Complementary
Technology
MOSFET (Metal Oxide)
Overview

AO4606 Datasheet Summary

General Description

The AO4606 is a 30V complementary MOSFET, featuring both N-channel and P-channel devices. It employs advanced trench technology to provide excellent RDS(ON) and low gate charge, making it suitable for a variety of applications, including high side switches.

Absolute Maximum Ratings

  • Drain-Source Voltage (VDS): 30V for N-channel, -30V for P-channel
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 6A for N-channel, -6.5A for P-channel
  • Pulsed Drain Current (IDM): 23A for N-channel, -30A for P-channel
  • Power Dissipation (PD): 1.3W (TJ(MAX)=150°C)
  • Junction and Storage Temperature Range (TJ, TSTG): -55°C to 150°C
  • Thermal Resistance (RqJA): 90°C/W

Electrical Characteristics

N-Channel

  • Drain-Source Breakdown Voltage (BVDSS): 30V
  • Gate Threshold Voltage (VGS(th)): 1.2V to 2.4V
  • Static Drain-Source On-Resistance (RDS(ON)): <30mΩ (VGS=10V), <42mΩ (VGS=4.5V)
  • Zero Gate Voltage Drain Current (IDSS): 25mA (TJ=125°C)
  • Forward Transconductance (gFS): 15S
  • Body Diode Forward Voltage (VSD): 0.76V to 1V
  • Body Diode Reverse Recovery Time (trr): 8.5ns to 12ns
  • Total Gate Charge (Qg): 4nC to 6nC (VGS=10V), 2nC to 3nC (VGS=4.5V)
  • Turn-On Delay Time (tD(on)): 4.5ns
  • Turn-On Rise Time (tr): 2.5ns
  • Turn-Off Delay Time (tD(off)): 14.5ns
  • Turn-Off Fall Time (tf): 3.5ns

P-Channel

  • Drain-Source Breakdown Voltage (BVDSS): -30V
  • Gate Threshold Voltage (VGS(th)): -1.3V to -2.4V
  • Static Drain-Source On-Resistance (RDS(ON)): <28mΩ (VGS=-10V), <44mΩ (VGS=-4.5V)
  • Zero Gate Voltage Drain Current (IDSS): 22mA (TJ=125°C)
  • Forward Transconductance (gFS): 18S
  • Body Diode Forward Voltage (VSD): -0.8V to -1V
  • Body Diode Reverse Recovery Time (trr): 15ns
  • Total Gate Charge (Qg): 13.6nC to 16nC (VGS=-10V), 6.7nC to 8nC (VGS=-4.5V)
  • Turn-On Delay Time (tD(on)): 8ns
  • Turn-On Rise Time (tr): 6ns
  • Turn-Off Delay Time (tD(off)): 17ns
  • Turn-Off Fall Time (tf): 5ns

Thermal Characteristics

  • Junction-to-Lead Thermal Resistance (RqJL): 48°C/W
  • Junction-to-Ambient Thermal Resistance (RqJA): 90°C/W

Applications

  • High Side Switches
  • Motor Control
  • Power Supplies
  • Battery Management Systems

Package Information

  • Package Type: SOIC-8
  • Pin Configuration:Pin 1: G1 (Gate 1)Pin 2: D1 (Drain 1)Pin 3: S1 (Source 1)Pin 4: G2 (Gate 2)Pin 5: D2 (Drain 2)Pin 6: S2 (Source 2)

Notes

  • The AO4606 is not authorized for use in life support devices or systems.
  • AOS reserves the right to make changes to product specifications without notice.
  • Customers are responsible for evaluating the suitability of the product for their intended application and complying with applicable legal requirements, including export control rules and regulations.
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