DESCRIPTION

· The AON5802 is a common-drain dual N-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology.

· It offers excellent RDS(ON), low gate charge, and operates with gate voltages as low as 2.5V while maintaining a 12V VGS(MAX) rating.

· The device is ESD protected and suitable for uni-directional or bi-directional load switches due to its common-drain configuration.

· It is a Pb-free product, compliant with ROHS & Sony 259 specifications.

FEATURES

· VDS (V) = 30V.

· ID = 7.2A (VGS = 4.5V).

· RDS(ON) < 20 mΩ (VGS = 4.5V), < 22 mΩ (VGS = 4.0V), < 24 mΩ (VGS = 3.1V), < 30 mΩ (VGS = 2.5V).

· ESD protected.

APPLICATIONS

· Suitable for use as a uni-directional or bi-directional load switch.

· Ideal for applications requiring low gate charge and low RDS(ON).