Name: BCR133E6393HTSA1
Brand: Infineon Technologies
SKU: JM-BCR133E6393HTSA1
Availability: InStock

Infineon Technologies BCR133E6393HTSA1

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
BCR133E6393HTSA1
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
BCR133E6393HTSA1_Datesheet
Description:
TRANS PREBIAS NPN 50V SOT23
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Specifications

Type

Paramete

Type

Paramete

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Resistor - Emitter Base (R2)

10 kOhms

Supplier Device Package

PG-SOT23

Qualification

Current - Collector (Ic) (Max)

100 mA

Mounting Type

Surface Mount

Voltage - Collector Emitter Breakdown (Max)

50 V

Resistor - Base (R1)

10 kOhms

Package / Case

TO-236-3, SC-59, SOT-23-3

Transistor Type

NPN - Pre-Biased

Power - Max

200 mW

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

130 MHz

Grade

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Overview

DESCRIPTION

· NPN Silicon Digital Transistor with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)

· BCR133S variant includes two internally isolated transistors in a multichip package

· Pb-free and RoHS compliant packaging

· Qualified according to AEC Q101 standards

FEATURES

· Integrated bias resistors for simplified circuit design

· Available in SOT23, SOT363, and SOT323 packages

· BCR133S offers matched transistor pairs for enhanced performance

· Suitable for high-reliability applications

APPLICATIONS

· Switching circuits

· Inverter circuits

· Interface circuits

· Drive circuits

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Infineon Technologies BCR133E6393HTSA1

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