BSP129L6906 Model Information

Part Number: BSP129L6906

Manufacturer: Infineon Technologies AG

Product Line: SIPMOS® Small-Signal-Transistor

Package Type: PG-SOT223

Marking: BSP129

Key Features

• N-Channel
• Depletion Mode
• dv/dt Rated
• Available with VGS(th) Indicator on Reel
• Pb-Free Lead Plating; RoHS Compliant
• Qualified According to AEC Q101
• Halogen-Free According to IEC61249-2-21

Maximum Ratings (at Tj = 25°C, unless otherwise specified)

• Continuous Drain Current (ID):TA = 25°C: 0.35 ATA = 70°C: 0.28 A
• Pulsed Drain Current (ID,pulse): 1.4 A (TA = 25°C)
• Reverse Diode dv/dt: 6 kV/µs (ID = 0.36 A, VDS = 192 V, di/dt = 200 A/µs, Tj,max = 150°C)
• Gate-Source Voltage (VGS): ±20 V
• ESD Class (JESD22-A114-HBM): 1A (>250V, <500V)
• Power Dissipation (Ptot): 1.8 W (TA = 25°C)
• Operating and Storage Temperature (Tj, Tstg): -55°C to +150°C

Thermal Characteristics

• Thermal Resistance, Junction - Soldering Point (pin 4) (RθJS): 25 K/W
• Thermal Resistance, Junction - Ambient (RθJA):SMD Version, Device on PCB, Minimal Footprint: 115 K/W6 cm² Cooling Area: 70 K/W

Electrical Characteristics (at Tj = 25°C, unless otherwise specified)

Static Characteristics

• Drain-Source Breakdown Voltage (V(BR)DSS): 240 V (VGS = -3 V, ID = 250 µA)
• Gate Threshold Voltage (VGS(th)): -2.1 V to -1 V (VDS = 3 V, ID = 108 µA)
• Drain-Source Cutoff Current (ID(off)):VDS = 240 V, VGS = -3 V, Tj = 25°C: 0.1 µAVDS = 240 V, VGS = -3 V, Tj = 125°C: 10 µA
• Gate-Source Leakage Current (IGSS): 10 nA (VGS = 20 V, VDS = 0 V)
• On-State Drain Current (IDSS): 50 mA (VGS = 0 V, VDS = 10 V)
• Drain-Source On-State Resistance (RDS(on)):VGS = 0 V, ID = 25 mA: 6.5 Ω to 20 ΩVGS = 10 V, ID = 0.35 A: 4.2 Ω to 6.0 Ω
• Transconductance (gm): 0.18 S to 0.36 S (|VDS| > 2|ID|RDS(on)max, ID = 0.28 A)

Dynamic Characteristics

• Input Capacitance (Ciss): 82 pF to 108 pF
• Output Capacitance (Coss): 12 pF to 16 pF
• Reverse Transfer Capacitance (Crss): 6 pF to 10 pF
• Turn-On Delay Time (td(on)): 4.4 ns to 6.6 ns
• Rise Time (tr): 4.1 ns to 6.2 ns
• Turn-Off Delay Time (td(off)): 22 ns to 33 ns
• Fall Time (tf): 35 ns to 53 ns

Gate Charge Characteristics

• Gate to Source Charge (Qgs): 0.24 nC to 0.36 nC
• Gate to Drain Charge (Qgd): 1.7 nC to 2.6 nC
• Gate Charge Total (Qg): 3.8 nC to 5.7 nC
• Gate Plateau Voltage (Vplateau): 0.37 V

Reverse Diode Characteristics

• Diode Continuous Forward Current (IS): 0.35 A
• Diode Pulse Current (IS,pulse): 1.4 A
• Diode Forward Voltage (VSD): 0.79 V to 1.2 V (VGS = -3 V, IF = 0.35 A, Tj = 25°C)
• Reverse Recovery Time (trr): 53 ns to 80 ns
• Reverse Recovery Charge (Qrr): 65 nC to 97 nC (VR = 120 V, IF = 0.2 A, diF/dt = 100 A/µs)

Threshold Voltage Bands

• J Band: -1.2 V to -1 V
• K Band: -1.35 V to -1.15 V
• L Band: -1.5 V to -1.3 V
• M Band: -1.65 V to -1.45 V
• N Band: -1.8 V to -1.6 V

Package Outline

• Package Type: PG-SOT223
• Dimensions:A: 0.90 mm to 1.20 mmA1: 0.15 mm to 0.35 mmD: 4.80 mm to 5.35 mmD1: 0.03 mm to 0.23 mmE: 5.70 mmE1: 5.90 mm to 6.10 mm

Packaging

• Tape and Reel Marking: BSP129
• Packaging Quantity:L6906: 1000 pcs/reel