Vishay BYV26C-TR

View All Single, Pre-Biased Bipolar Transistors by Vishay

Part Number:
BYV26C-TR
Manufacturer:
Vishay
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
BYV26C-TR_Datesheet
Description:
DIODE AVALANCHE 600V 1A SOD57
In stock 35,379

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Specifications

Type

Paramete

Type

Paramete

Package / Case

SOD-57, Axial

Qualification

Voltage - Forward (Vf) (Max) @ If

2.5 V @ 1 A

Capacitance @ Vr, F

Grade

Current - Average Rectified (Io)

Operating Temperature - Junction

-55°C ~ 175°C

Supplier Device Package

SOD-57

Reverse Recovery Time (trr)

30 ns

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Technology

Avalanche

Voltage - DC Reverse (Vr) (Max)

600 V

Current - Reverse Leakage @ Vr

5 µA @ 600 V

Mounting Type

Through Hole

Overview

Product Information Summary for BYV26C-TR

Name: BYV26C-TR
Brand: Vishay
SKU: JM-BYV26C-TR
Availability: InStock

General Description

The BYV26C-TR is an Ultra-Fast Avalanche Sinterglass Diode designed for high-speed switching applications. It features a glass passivated junction and a hermetically sealed package, ensuring high reliability and low switching losses.

Key Features

Glass passivated junction
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Suitable for high-frequency applications

Applications

Switched mode power supplies
High-frequency inverter circuits

Ordering Information

Device Name: BYV26C
Ordering Code: BYV26C-TR
Packaging: 5000 units per 10" tape and reel
Minimum Order Quantity: 25,000 units

Mechanical Data

Case: SOD-57
Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: Approximately 369 mg

Absolute Maximum Ratings (Tamb = 25 °C, unless otherwise specified)

TableCopy

Parameter	Test Condition	Symbol	Value	Unit
Reverse Voltage	Repetitive peak reverse voltage	VRRM	600 V	V
Peak Forward Surge Current	tp = 10 ms, half sine wave	IFSM	30 A	A
Average Forward Current	-	IF(AV)	1 A	A
Non Repetitive Reverse Avalanche Energy	I(BR)R = 1 A, inductive load	ER	10 mJ	mJ
Junction and Storage Temperature Range	-	T = Tstg	-55 to +175 °C	°C

Typical Characteristics (Tamb = 25 °C, unless otherwise specified)

Max. Reverse Power Dissipation vs. Junction Temperature: See Figure 1
Max. Reverse Current vs. Junction Temperature: See Figure 2

Maximum Thermal Resistance (Tamb = 25 °C, unless otherwise specified)

TableCopy

Parameter	Test Condition	Symbol	Value	Unit
Junction Ambient	l = 10 mm, TL = constant	RthJA	45 K/W	K/W

Electrical Characteristics (Tamb = 25 °C, unless otherwise specified)

TableCopy

Parameter	Test Condition	Symbol	Min	Typ	Max	Unit
Forward Voltage	IF = 1 A	VF	2.5 V	-	-	V
Forward Voltage	IF = 1 A, T = 175 °C	VF	1.3 V	-	-	V
Reverse Current	VR = VRRM	IR	5 μA	-	-	μA
Reverse Current	VR = VRRM, T = 150 °C	IR	-	-	100 μA	μA
Reverse Breakdown Voltage	IR = 100 μA	V(BR)R	-	-	700 V	V
Reverse Recovery Time	IF = 0.5 A, IR = 1 A, iR = 0.25 A	trr	-	30 ns	-	ns

Package Dimensions

Case: SOD-57
Dimensions: Refer to the datasheet for detailed dimensions.

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