Diodes Incorporated DDTD114TU-7-F

View All Single, Pre-Biased Bipolar Transistors by Diodes Incorporated

Part Number:
DDTD114TU-7-F
Manufacturer:
Diodes Incorporated
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
DDTD114TU-7-F_Datesheet
Description:
TRANS PREBIAS NPN 50V SOT323
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Specifications

Type

Paramete

Type

Paramete

Frequency - Transition

200 MHz

Package / Case

SC-70, SOT-323

Resistor - Emitter Base (R2)

Resistor - Base (R1)

10 kOhms

Grade

Qualification

Current - Collector Cutoff (Max)

500nA (ICBO)

Supplier Device Package

SOT-323

Voltage - Collector Emitter Breakdown (Max)

50 V

Transistor Type

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 5mA, 5V

Power - Max

200 mW

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Mounting Type

Surface Mount

Current - Collector (Ic) (Max)

500 mA

Overview

Diodes Incorporated

DDTD114TU-7-F – NPN Pre-Biased Digital Transistor

1. Device Overview

Part Number: DDTD114TU-7-F
Description: Single NPN digital (resistor-biased) transistor in SOT323 package
Status: Active (standard reel)
Package: SOT323 (3-lead surface-mount)
Reel Size / Qty: 7-inch (178 mm) tape, 3,000 pcs / reel
Product Marking: N71

2. Built-In Bias Network

R1 (base series): 10 kΩ (nom.)
R2 (base–emitter): Open (not fitted)

3. Absolute Maximum Ratings (@ TA = +25 °C)

Parameter	Symbol	Value	Unit
Supply voltage (pin 3 → 2)	VCC	50	V
Input voltage (pin 1 → 2)	VIN	–10 to +40	V
Emitter–base voltage	VEBO	5	V
Output (collector) current	IC	500	mA
Power dissipation (Note 1)	PD	200	mW
Junction & storage temp.	TJ, TSTG	–55 to +150	°C Note 1: Device mounted on FR-4 PCB with minimum recommended pad layout; thermal resistance RθJA = 625 °C/W.

4. Electrical Characteristics (@ TA = +25 °C unless noted)

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
DC current gain	hFE	100	250	600	—	IC = 5 mA, VCE = 5 V
Collector–emitter saturation	VCE(sat)	—	—	0.3	V	IC = 50 mA, IB = 2.5 mA
Collector cut-off	ICBO	—	—	0.5	µA	VCB = 50 V, IE = 0
Emitter cut-off	IEBO	—	—	0.5	µA	VEB = 4 V, IC = 0
Transition frequency	fT	—	200	—	MHz	VCE = 10 V, IE = 5 mA, f = 100 MHz

5. Mechanical Data – SOT323 Package

Dimension	Min	Nom	Max
Body length (D)	1.80	2.00	2.20 mm
Body width (E)	2.00	2.10	2.20 mm
Lead pitch (e)	—	0.65 BSC	—
Height (A2)	0.90	0.95	1.00 mm
Weight	—	0.006 g	— Suggested PCB pad layout available on Diodes Inc. website.

6. Environmental & Quality

RoHS: Fully compliant (no purposely added Pb)
Green / Halogen-Free: <900 ppm Br, <900 ppm Cl, <1000 ppm Sb
Flammability: UL 94 V-0 molding compound
Moisture Sensitivity: MSL 1 (J-STD-020)
Terminal Finish: Matte-tin plated, solderable per MIL-STD-202, Method 208

7. Typical Applications

Logic-level switching & driver stages
GPIO expansion, relay / LED drive
Space-constrained digital bias networks
Automotive (change-control version available on request – AEC-Q, PPAP, IATF 16949)

8. Packaging & Ordering

Standard Order Code: DDTD114TU-7-F (active)
Tape & Reel: 8 mm wide, 7-inch reel, 3,000 pieces
Date Code Format: N71 YM (Year & Month) printed on device

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