Product Identification Information for FF300R12KT4PHOSA1

Device:

• IGBT Module: FF300R12KT4P

Part Number:

• FF300R12KT4PHOSA1

Description:

• Module Type: 62mm C-Series Module
• IGBT Type: Fast Trench/Fieldstop IGBT4
• Diode Type: Emitter Controlled HE Diode
• Pre-applied Thermal Interface Material: Yes

Applications:

• High Power Converters
• Motor Drives
• UPS Systems
• Wind Turbines

Electrical Features:

• Extended Operating Temperature Range: Tvjop​
• Low Switching Losses
• Low VCEsat​
• Unbeatable Robustness
• VCEsat​ with Positive Temperature Coefficient

Mechanical Features:

• 4 kV AC 1min Insulation
• Package with CTI>400
• High Creepage and Clearance Distances
• Pre-applied Thermal Interface Material

Electrical Specifications:

• Collector-Emitter Voltage (VCES​): 1200 V
• Continuous DC Collector Current (ICnom​): 300 A
• Repetitive Peak Collector Current (ICRM​): 600 A
• Gate-Emitter Peak Voltage (VGES​): ±20 V
• Collector-Emitter Saturation Voltage (VCEsat​):1.75 V at Tvj​=25∘C2.05 V at Tvj​=125∘C2.10 V at Tvj​=150∘C
• Gate Threshold Voltage (VGEth​):5.20 V to 6.40 V at Tvj​=25∘C
• Gate Charge (QG​): 2.40 µC
• Internal Gate Resistor (RGint​): 2.5 Ω
• Input Capacitance (Cies​): 19.0 nF
• Reverse Transfer Capacitance (Cres​): 0.81 nF
• Collector-Emitter Cut-off Current (ICES​): 5.0 mA
• Gate-Emitter Leakage Current (IGES​): 400 nA

Switching Characteristics:

• Turn-on Delay Time (tdon​):0.16 µs at Tvj​=25∘C0.17 µs at Tvj​=125∘C0.18 µs at Tvj​=150∘C
• Rise Time (tr​):0.04 µs at Tvj​=25∘C0.045 µs at Tvj​=125∘C0.05 µs at Tvj​=150∘C
• Turn-off Delay Time (tdoff​):0.45 µs at Tvj​=25∘C0.52 µs at Tvj​=125∘C0.54 µs at Tvj​=150∘C
• Fall Time (tf​):0.10 µs at Tvj​=25∘C0.16 µs at Tvj​=125∘C0.18 µs at Tvj​=150∘C
• Turn-on Energy Loss per Pulse (Eon​):16.5 mJ at Tvj​=25∘C25.0 mJ at Tvj​=125∘C30.0 mJ at Tvj​=150∘C
• Turn-off Energy Loss per Pulse (Eoff​):19.5 mJ at Tvj​=25∘C29.5 mJ at Tvj​=125∘C32.5 mJ at Tvj​=150∘C

Diode Specifications:

• Repetitive Peak Reverse Voltage (VRRM​): 1200 V
• Continuous DC Forward Current (IF​): 300 A
• Repetitive Peak Forward Current (IFRM​): 600 A
• I²t Value:19000 A²s at Tvj​=125∘C18000 A²s at Tvj​=150∘C
• Forward Voltage (VF​):1.65 V at Tvj​=25∘C2.15 V at Tvj​=150∘C
• Peak Reverse Recovery Current (IRM​):350 A at Tvj​=25∘C380 A at Tvj​=125∘C390 A at Tvj​=150∘C
• Recovered Charge (Qr​):31.0 µC at Tvj​=25∘C48.0 µC at Tvj​=125∘C67.0 µC at Tvj​=150∘C
• Reverse Recovery Energy (Erec​):13.0 mJ at Tvj​=25∘C23.5 mJ at Tvj​=125∘C26.0 mJ at Tvj​=150∘C

Mechanical Specifications:

• Isolation Test Voltage (VISOL​): 4.0 kV RMS, f = 50 Hz, t = 1 min
• Material of Module Baseplate: Cu
• Internal Isolation: Basic insulation (class 1, IEC 61140)
• Creepage Distance:29.0 mm (terminal to heatsink)23.0 mm (terminal to terminal)
• Clearance:23.0 mm (terminal to heatsink)11.0 mm (terminal to terminal)
• Comparative Tracking Index (CTI): > 400
• Stray Inductance (LsCE​): 20 nH
• Module Lead Resistance (RCC′+EE′​): 0.70 mΩ
• Storage Temperature (Tstg​): -40°C to 125°C
• Maximum Baseplate Operating Temperature (TBPmax​): 125°C
• Mounting Torque for Module Mounting (M6 Screw): 3.00 Nm to 6.00 Nm
• Terminal Connection Torque (M6 Screw): 2.5 Nm to 5.0 Nm
• Weight: 340 g