Infineon Technologies IRF3205STRLPBF

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
IRF3205STRLPBF
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
IRF3205STRLPBF_Datesheet
Description:
MOSFET N-CH 55V 110A D2PAK
In stock 1,430

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Specifications

Type

Paramete

Type

Paramete

FET Feature

Mounting Type

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds

3247 pF @ 25 V

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8mOhm @ 62A, 10V

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Qualification

Drain to Source Voltage (Vdss)

55 V

FET Type

N-Channel

Vgs(th) (Max) @ Id

4V @ 250µA

Supplier Device Package

D2PAK

Vgs (Max)

±20V

Drive Voltage (Max Rds On, Min Rds On)

10V

Grade

Technology

MOSFET (Metal Oxide)

Power Dissipation (Max)

200W (Tc)

Gate Charge (Qg) (Max) @ Vgs

146 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Overview

IRF3205SPbF / IRF3205LPbF (IRF3205STRLPBF) – HEXFET® Power MOSFET Full Datasheet Summary

1. Basic Information

Manufacturer: International Rectifier (Infineon)
Device Type: N‑Channel HEXFET® Power MOSFET
Key Specifications: VDSS = 55 V, RDS(on) = 8.0 mΩ, ID = 110 A
Package Options:
Qualification: Industrial, lead‑free, fully avalanche rated
Applications: High‑current power conversion, motor drives, inverters, SMPS, battery systems

2. Key Features

Ultra‑low on‑resistance for high efficiency
Fast switching speed
Dynamic dv/dt rated
175°C maximum junction temperature
Rugged avalanche performance
Low package inductance
High power density

3. Absolute Maximum Ratings (TC = 25°C unless noted)

表格

Parameter	Symbol	Value	Unit
Drain‑Source Voltage	VDSS	55	V
Continuous Drain Current (25°C)	ID	110	A
Continuous Drain Current (100°C)	ID	80	A
Pulsed Drain Current	IDM	390	A
Power Dissipation (25°C)	PD	200	W
Derating Factor	—	1.3	W/°C
Gate‑Source Voltage	VGS	±20	V
Avalanche Current	IAR	62	A
Repetitive Avalanche Energy	EAR	20	mJ
Peak Diode Recovery dv/dt	dv/dt	5.0	V/ns
Operating Junction Temp	TJ	−55 to +175	°C
Storage Temp	Tstg	−55 to +175	°C
Soldering Temp (10 s)	—	300	°C
Mounting Torque	—	1.1	N·m

4. Thermal Resistance

表格

Parameter	Symbol	Max	Unit
Junction‑to‑Case	RθJC	0.75	°C/W
Junction‑to‑Ambient (PCB)	RθJA	40	°C/W

5. Electrical Characteristics (TJ = 25°C unless noted)

Static Electrical

表格

Parameter	Symbol	Min	Typ	Max	Conditions
Drain‑Source Breakdown Voltage	BVDS	55	—	—	ID = 1 mA, VGS = 0 V
On‑Resistance	RDS(on)	—	8.0	—	VGS = 10 V, ID = 62 A
Gate Threshold Voltage	VGS(th)	2.0	—	4.0	VDS = VGS, ID = 250 μA
Forward Transconductance	gfs	—	—	—	VDS = 25 V, ID = 62 A
Drain Leakage (150°C)	IDSS	—	—	250	μA	VDS = 44 V, VGS = 0 V

Dynamic & Charge

表格

Parameter	Symbol	Typ	Max	Conditions
Total Gate Charge	Qg	—	—	—	VGS = 10 V, ID = 62 A
Gate‑Source Charge	Qgs	—	35	—	—
Gate‑Drain Charge	Qgd	—	54	—	—
Input Capacitance	Ciss	—	3247	pF	VGS = 0 V, f = 1 MHz
Output Capacitance	Coss	—	781	pF	—
Reverse Transfer Cap.	Crss	—	211	pF	—

Switching Times (RG = 4.5 Ω)

表格

Parameter	Symbol	Value	Unit
Turn‑On Delay	td(on)	—	ns
Rise Time	tr	—	ns
Turn‑Off Delay	td(off)	50	ns
Fall Time	tf	—	ns

Intrinsic Diode

表格

Parameter	Symbol	Value	Unit
Continuous Source Current	IS	110	A
Pulsed Source Current	ISM	390	A
Diode Forward Voltage	VSD	1.3	V	IF = 62 A
Reverse Recovery Time	trr	104	ns
Reverse Recovery Charge	Qrr	215	nC

6. Package & Pinout

D2Pak (IRF3205SPbF)

Surface‑mount high‑power package
Pin 1: Gate; Pin 2: Drain; Pin 3: Source

TO‑262 (IRF3205LPbF)

Through‑hole low‑profile package
Pin 1: Gate; Pin 2: Drain; Pin 3: Source

Marking

Lead‑free indicated by “P” in part code
Date code, lot code, assembly site included

7. Important Notes

This is a preliminary/industrial‑grade device; not for automotive or life‑support systems.
Absolute maximum ratings are stress values only; avoid continuous operation at limits.
Use proper gate drive (10 V typical) and thermal management.
ESD‑sensitive; follow handling precautions.
Specifications subject to change without notice.

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