Vishay IRF840PBF


- Part Number:
IRF840PBF
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
IRF840PBF_Datesheet - Description:
MOSFET N-CH 500V 8A TO220AB
- In stock 0
IRF840PBF – Complete Datasheet Summary
1. Basic Identification
- Full Part Number: IRF840PBF
- Manufacturer: Vishay Siliconix
- Device Type: N‑Channel Power MOSFET (3rd‑generation HEXFET®)
- Case / Package: TO‑220AB through‑hole
- Termination: Pb‑free (RoHS compliant)
- Polarity: Enhancement‑mode, N‑channel
- Document: IRF840 / SiHF840 Rev. D (Doc #: 91070)
2. Key Features
- 500 V high‑voltage capability
- Fast switching speed
- Repetitive avalanche rated
- Dynamic dV/dt rated
- Low gate charge
- Easy to parallel
- Simple drive requirements
- RoHS / lead‑free (PbF suffix)
3. Absolute Maximum Ratings (TC = 25°C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain–Source Voltage | VDS | 500 | V |
| Gate–Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 8.0 | A |
| Continuous Drain Current (TC = 100°C) | ID | 5.1 | A |
| Pulsed Drain Current | IDM | 32 | A |
| Power Dissipation (TC = 25°C) | PD | 125 | W |
| Derating Factor | — | 1.0 | W/°C |
| Single‑Pulse Avalanche Energy | EAS | 510 | mJ |
| Repetitive Avalanche Current | IAR | 8.0 | A |
| Diode Recovery dV/dt | dV/dt | 3.5 | V/ns |
| Operating / Storage Temp | TJ, Tstg | −55 to +150 | °C |
| Soldering Temp (10 s) | — | 300 | °C |
4. Thermal Characteristics
| Parameter | Symbol | Max | Unit |
|---|---|---|---|
| Junction‑to‑Case | RthJC | 1.0 | °C/W |
| Junction‑to‑Ambient | RthJA | 62 | °C/W |
| Case‑to‑Sink (greased) | RthCS | 0.50 | °C/W |
5. Electrical Specifications (TJ = 25°C)
Static Electrical
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS Breakdown Voltage | VGS = 0 V, ID = 250 µA | 500 | — | — | V |
| Gate Threshold Voltage | VDS = VGS, ID = 250 µA | 2.0 | — | 4.0 | V |
| Zero‑Gate Drain Leakage | VDS = 500 V, VGS = 0 V | — | — | 25 | µA |
| On‑State Resistance | VGS = 10 V, ID = 4.8 A | — | — | 0.85 | Ω |
| Forward Transconductance | VDS = 50 V, ID = 4.8 A | — | 4.9 | — | S |
Dynamic Electrical
| Parameter | Conditions | Typ | Max | Unit |
|---|---|---|---|---|
| Input Capacitance | VDS = 25 V, f = 1 MHz | — | 1300 | pF |
| Output Capacitance | — | — | 310 | pF |
| Reverse Transfer Capacitance | — | — | 120 | pF |
| Total Gate Charge | VGS = 10 V, ID = 8 A | — | 63 | nC |
| Gate–Source Charge | — | — | 9.3 | nC |
| Gate–Drain Charge | — | — | 32 | nC |
| Turn‑On Delay | VDD = 250 V, ID = 8 A | 14 | — | ns |
| Rise Time | — | 23 | — | ns |
| Turn‑Off Delay | — | 49 | — | ns |
| Fall Time | — | 20 | — | ns |
Body Diode Characteristics
| Parameter | Conditions | Value | Unit | |
|---|---|---|---|---|
| Continuous Diode Current | IS | 8.0 | A | |
| Pulsed Diode Current | ISM | 32 | A | |
| Diode Forward Voltage | TJ = 25°C, IS = 8 A | — | 2.0 | V |
| Reverse Recovery Time | dI/dt = 100 A/µs | — | 970 | ns |
| Reverse Recovery Charge | — | — | 8.9 | µC |
6. Package & Pinout (TO‑220AB)
- Package: TO‑220AB through‑hole
- Pin Assignments:
- Tab = Drain
7. Typical Applications
- Switching power supplies
- Motor drives & inverters
- Power management
- Industrial controls
- Lighting ballasts
- High‑voltage converters
- Automotive systems
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