Model Information for IXA40PG1200DHG-TUB

Product Overview

The IXA40PG1200DHG-TUB is a high-performance power semiconductor device from IXYS, designed for applications requiring robust and efficient power management. It integrates advanced IGBT and diode technologies in a compact, surface-mount package.

Key Features

• XPT IGBT: Low saturation voltage, positive temperature coefficient for easy paralleling, fast switching, and short tail current for optimized performance in resonant circuits.
• Sonic™ Diode: Fast reverse recovery, low operating forward voltage, low leakage current, and integrated VCESAT detection diode.
• Package: Isolated back surface, low coupling capacity between pins and heatsink, PCB space-saving, application-friendly pinout, and low inductive current path.

Applications

The IXA40PG1200DHG-TUB is suitable for a variety of high-power applications, including:

• Phase-leg buck-boost chopper
• Full bridge power supplies
• Induction heating
• Four-quadrant DC drives
• Controlled rectifiers
• Three-phase bridge AC drives

Electrical Specifications

• Maximum Ratings:VcEs (Collector-Emitter Voltage): 1200 VVGES (Gate-Emitter Voltage): ±20 VIc25 (Collector Current at 25°C): 63 AIc80 (Collector Current at 80°C): 45 AIcm (Pulse Collector Current): 105 Atsc (Short-Circuit Time): 10 usPtot (Total Power Dissipation at 25°C): 230 W
• Typical Characteristics:VcE(sat) (Collector-Emitter Saturation Voltage): 1.85 V (typ.) at 35A, 15V, 25°CVGE(th) (Gate-Emitter Threshold Voltage): 5.4 V (min.) to 6.5 V (max.)Ices (Collector-Emitter Leakage Current): 0.25 mA (typ.) at 25°CIGES (Gate-Emitter Leakage Current): 200 nA (max.)ta(on) (Turn-On Time): 70 ns (typ.)ta(off) (Turn-Off Time): 40 ns (typ.)Eon (Turn-On Energy): 3.8 mJ (typ.)Eoff (Turn-Off Energy): 4.1 mJ (typ.)Cies (Input Capacitance): TBD (typ.)QGon (Gate Charge): 107 nC (typ.)RthJc (Thermal Resistance, Junction to Case): 0.75 K/W (typ.)RthJH (Thermal Resistance, Junction to Heatsink): 0.55 K/W (typ.)

Diodes Specifications

• Maximum Ratings:IF25 (Forward Current at 25°C): 40 AIF80 (Forward Current at 80°C): 27 AVR (Reverse Voltage): 1200 V
• Typical Characteristics:VF (Forward Voltage): 2.1 V (typ.) at 35A, 25°CIRM (Reverse Current): 30 µA (typ.) at 600V, 125°Ctrr (Reverse Recovery Time): 350 ns (typ.) at 35A, 125°CErec (Recovery Energy): TBD (typ.)RthJC (Thermal Resistance, Junction to Case): 1.2 K/W (typ.)RthJH (Thermal Resistance, Junction to Heatsink): 0.9 K/W (typ.)

Package Information

• Package Type: Surface Mount Power Device
• Dimensions:Length: 32.7 ± 0.5 mmWidth: 19 ± 0.1 mmHeight: 5.5 ± 0.1 mm
• Pinout:S1, S2: IGBTsD1, D2: Sonic™ DiodesD3, D4: Detection Diodes

Ordering Information

• Ordering Name: IXA40PG1200DHG-TUB
• Marking on Product: IXA40PG1200DHG-TUB
• Delivering Mode: Tape & Reel
• Base Quantity: 200
• Ordering Code: TBD