MTW16N40E Datasheet Summary

General Information

• Manufacturer: Semiconductor Components Industries, LLC
• Part Number: MTW16N40E
• Package Type: TO-247
• Shipping Quantity: 30 Units/Rail

Description

The MTW16N40E is a high voltage N-Channel Power MOSFET designed for high voltage, high speed switching applications in power supplies, converters, and PWM motor controls. It features an advanced termination scheme for enhanced voltage-blocking capability and is designed to withstand high energy in avalanche and commutation modes. The device also includes a fast recovery drain-to-source diode.

Features

• High Voltage Termination: Robust design for enhanced voltage-blocking capability.
• Avalanche Energy Specified: Designed to withstand high energy in avalanche mode.
• Fast Recovery Diode: Comparable to a discrete fast recovery diode.
• Characterized for Bridge Circuits: Suitable for bridge circuits with critical diode speed and commutating safe operating areas.
• IDSS and VDS(on) Specified at Elevated Temperature: Ensures reliability under high-temperature conditions.
• Isolated Mounting Hole: Reduces mounting hardware interference.

Maximum Ratings (TC = 25°C unless otherwise noted)

• Drain-Source Voltage (VDSS): 400 Vdc
• Drain-Gate Voltage (VDGR): 400 Vdc
• Gate-Source Voltage (VGS, VGSM): ±20 Vdc, ±40 Vpk
• Drain Current (ID, IDM): 16 Adc, 56 Apk
• Total Power Dissipation (PD): 180 W (derates 1.4 W/°C above 25°C)
• Operating and Storage Temperature Range (TJ, Tstg): -55°C to 150°C
• Single Pulse Drain-to-Source Avalanche Energy (EAS): 870 mJ
• Thermal Resistance (RθJC, RθJA): 0.70°C/W, 40°C/W
• Maximum Lead Temperature for Soldering Purposes (TL): 260°C

Ordering Information

• Part Number: MTW16N40E
• Package: TO-247
• Shipping Quantity: 30 Units/Rail

Marking Diagram & Pin Assignment

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source
• Pin 4: Drain

Electrical Characteristics (TJ = 25°C unless otherwise noted)

OFF CHARACTERISTICS

• Drain-to-Source Breakdown Voltage (V(BR)DSS): 400 Vdc to 420 Vdc
• Zero Gate Voltage Drain Current (IDSS): 0.25 mA to 1.0 mA
• Gate-Body Leakage Current (IGSS): ±100 nA

ON CHARACTERISTICS

• Gate Threshold Voltage (VGS(th)): 2.0 V to 3.0 V
• Static Drain-Source On-Resistance (RDS(on)): 0.225 Ω to 0.24 Ω
• Drain-Source On-Voltage (VDS(on)): 4.8 V to 4.3 V
• Forward Transconductance (gFS): 8.0 mhos to 10 mhos

DYNAMIC CHARACTERISTICS

• Input Capacitance (Ciss): 2570 pF to 3600 pF
• Output Capacitance (Coss): 330 pF to 460 pF
• Reverse Transfer Capacitance (Crss): 82 pF to 164 pF

SWITCHING CHARACTERISTICS

• Turn-On Delay Time (td(on)): 29 ns to 50 ns
• Rise Time (tr): 62 ns to 70 ns
• Turn-Off Delay Time (td(off)): 76 ns to 170 ns
• Fall Time (tf): 57 ns to 95 ns
• Gate Charge (QT): 66 nC to 93 nC

SOURCE-DRAIN DIODE CHARACTERISTICS

• Forward On-Voltage (VSD): 1.0 V to 1.6 V
• Reverse Recovery Time (trr): 340 ns
• Reverse Recovery Stored Charge (QRR): 4.3 µC

INTERNAL PACKAGE INDUCTANCE

• Internal Drain Inductance (LD): 5.0 nH
• Internal Source Inductance (LS): 13 nH

Typical Electrical Characteristics

• On-Region Characteristics: RDS(on) vs Drain Current and Temperature
• Transfer Characteristics: ID vs VGS
• On-Resistance vs Drain Current and Gate Voltage: RDS(on) vs ID and VGS
• On-Resistance Variation with Temperature: RDS(on) vs TJ
• Drain-to-Source Leakage Current vs Voltage: IDSS vs VDS
• Capacitance Variation: Ciss, Coss, Crss vs VDS and VGS

Safe Operating Area

• Forward Biased Safe Operating Area: Defines maximum simultaneous drain-to-source voltage and drain current.
• Avalanche Energy: Specified at rated continuous current (ID) and derated for temperature.

Package Dimensions

• TO-247 Case 340K-01: Detailed dimensions provided in the datasheet.