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CML Microcircuits MWT-LN600
- Part Number:
MWT-LN600
- Manufacturer:
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- RoHs:
Non-RoHS Compliant - Datasheet:
MWT-LN600_Datesheet - Description:
RF MOSFET PHEMT FET 3V DIE
- In stock 867
MWT-LN600
26 GHz Super-Low-Noise pHEMT Discrete Transistor
(MicroWave Technology, Inc.)
1. Device Overview
- Technology: 0.15 µm gate-length, quasi-enhancement-mode pHEMT
- Gate width: 600 µm
- Chip size: 490 µm × 430 µm × 100 µm (thickness)
- Bond-pad sizes:– Source: 100 µm × 300 µm– Gate & Drain: 80 µm × 90 µm
- Gold-plated backside, suitable for eutectic or silver-epoxy die attach
2. Recommended Biasing
- For optimum noise figure: V<sub> = 2.5 V, set V<sub> ≈ 0 V (or slightly positive) to obtain I<sub> = 40 mA
- For higher linearity: V<sub> = 3 V, I<sub> = 100 mA
3. RF Performance (T<sub> = 25 °C)
TableCopy
| Parameter | 4 GHz | 12 GHz | Unit | Conditions |
|---|---|---|---|---|
| Min. Noise Figure (NF<sub>) | 0.2 | 0.5 | dB | V<sub> = 2.5 V, I<sub> = 40 mA |
| Associated Gain (G<sub>) | 11.0 / 12.0 typ | 8.0 / 9.0 typ | dB | same bias |
| Output P1dB | — | 20 | dBm | V<sub> = 3 V, I<sub> = 100 mA |
4. DC Characteristics (T<sub> = 25 °C)
TableCopy
| Symbol | Parameter | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| I<sub> | Max. drain current | 150 | 175 | 250 | mA | V<sub> = 2.5 V, V<sub> = +0.6 V |
| G<sub> | Trans-conductance | 300 | 400 | — | mS | V<sub> = 2.5 V, V<sub> = +0.2 V |
| V<sub> | Pinch-off voltage | — | –0.2 | — | V | V<sub> = 2 V, I<sub> = 1 mA |
| BVGSO | Gate-source breakdown | –6 | –8 | — | V | I<sub> = –0.6 mA |
| BVGDO | Gate-drain breakdown | –7.5 | –9 | — | V | I<sub> = –0.6 mA |
| R<sub> | Thermal resistance (chip) | — | 85 | — | °C/W | Depends on mount |
5. Absolute Maximum Ratings (T<sub> = 25 °C)
TableCopy
| Parameter | Symbol | Continuous Max. | Absolute Max. | Unit |
|---|---|---|---|---|
| Drain-source voltage | V<sub> | 4.5 | 5.5 | V |
| Channel temperature | T<sub> | 150 | 175 | °C |
| Storage temperature | T<sub> | –65 to +160 | +180 | °C |
| RF input power | P<sub> | 30 | 50 | mW |
| Total power dissipation | P<sub> | 500 | 600 | mW Exceeding any continuous limit may degrade performance or cause permanent damage. |
6. Typical Performance Curves (see datasheet plots)
- NF & G<sub> vs. frequency (6–26 GHz)
- NF & G<sub> vs. I<sub> (12 GHz)
- G<sub> & I<sub> vs. V<sub>
- DC I-V family of curves
7. Assembly Recommendations
- Use 1-mil (25 µm) gold bond wires, kept as short as possible
- Place 10 × 10 × 5 µm gold blocks adjacent to the device to minimize wire length
- Die attach: eutectic Au-Sn or conductive silver epoxy; ensure void-free backside contact for lowest thermal resistance
8. Applications
- Ultra-low-noise front ends for commercial, military and space receivers
- Wideband (6–18 GHz) and narrow-band blocks up to ~20 GHz
- EW, radar, SATCOM, radiometry and instrumentation
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