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CML Microcircuits MWT-PH27F
- Part Number:
MWT-PH27F
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
MWT-PH27F_Datesheet - Description:
RF MOSFET PHEMT FET 3V CHIP
- In stock 70
MWT-PH27F Specification Summary
1. Product Overview
MWT-PH27F is a 26 GHz medium-power pseudomorphic high-electron-mobility transistor (pHEMT) manufactured by CML Microcircuits. Based on AlGaAs/InGaAs technology, it features a 0.25 μm refractory metal/gold gate and 400 μm gate width, delivering high gain, medium power, and excellent power-added efficiency (PAE) across wideband (6–18 GHz) and narrowband applications. The device is passivated with reliable metal systems for enhanced reliability, making it suitable for commercial, military, and high-reliability (Hi-Rel) space applications.
2. Key Features
- Technology & Structure: AlGaAs/InGaAs pHEMT; 0.25 μm × 400 μm refractory metal/gold gate
- Frequency Range: Up to 26 GHz (optimized for 6–18 GHz wideband use)
- Power Performance: 25 dBm saturated power (Psat) at 18 GHz; 22.5 dBm output power at 1 dB compression (P1dB)
- Gain & Efficiency: 16 dB small-signal gain (SSG) at 18 GHz; 45% PAE at P1dB (18 GHz)
- Linear Performance: 31 dBm output third-order intercept point (OIP3) at 18 GHz
- Reliability: Passivated chip with robust metal systems; suitable for Hi-Rel/military/space applications
- Packaging Options: 70 Package (MwT-PH27F70), 71 Package (MwT-PH27F71), 73 Package (MwT-PH27F73)
3. Physical Dimensions
| Parameter | Value | Unit |
|---|---|---|
| Chip Length | 340 | μm |
| Chip Width | 360 | μm |
| Chip Thickness | 100 | μm |
| Bond Wire Diameter | 1.0 | mil |
| Input Reference Microstrip Length | 7 | mils |
| Output Reference Microstrip Length | 19 | mils |
| Gold Ridge Dimensions (2 units) | 10 × 10 × 5 | mils |
4. Absolute Maximum Ratings
| Symbol | Parameter | Units | Continuous Maximum | Absolute Maximum |
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | V | 8.0 | 8.5 |
| Tch | Channel Temperature | °C | +150 | +175 |
| Tst | Storage Temperature | °C | -65 to +150 | -65 to +175 |
| Pin | RF Input Power | mW | 130 | 200 |
Note: Exceeding continuous maximum ratings may reduce mean-time-to-failure (MTTF) below design goals; exceeding absolute maximum ratings may cause permanent device damage.
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