onsemi NTS4001NT1G

View All FET, MOSFET Arrays by onsemi

Part Number:
NTS4001NT1G
Manufacturer:
onsemi
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
NTS4001NT1G_Datesheet
Description:
MOSFET N-CH 30V 270MA SC70-3
In stock 42,720

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Specifications

Type

Paramete

Type

Paramete

Current - Continuous Drain (Id) @ 25°C

270mA (Ta)

FET Type

N-Channel

Supplier Device Package

SC-70-3 (SOT323)

Drain to Source Voltage (Vdss)

30 V

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Package / Case

SC-70, SOT-323

Gate Charge (Qg) (Max) @ Vgs

1.3 nC @ 5 V

Vgs (Max)

±20V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 10mA, 4V

Qualification

Input Capacitance (Ciss) (Max) @ Vds

33 pF @ 5 V

Grade

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

FET Feature

Mounting Type

Surface Mount

Power Dissipation (Max)

330mW (Ta)

Vgs(th) (Max) @ Id

1.5V @ 100µA

Overview

NTS4001NT1G: Technical Specifications and Details

Name: NTS4001NT1G
Brand: onsemi
SKU: JM-NTS4001NT1G
Availability: InStock

Overview

The NTS4001NT1G is a single N-Channel MOSFET designed for small signal applications. This product is manufactured by onsemi (formerly ON Semiconductor) and is RoHS compliant and Pb-Free. The data sheet was last revised in June 2019.

Features

Low Gate Charge for Fast Switching
Small Footprint (30% Smaller than TSOP-6)
ESD Protected Gate
AEC-Q101 Qualified and PPAP Capable (NVS4001N)
Pb-Free and RoHS Compliant

Applications

Low Side Load Switch
Li-Ion Battery Supplied Devices (Cell Phones, PDAs, DSC)
Buck Converters
Level Shifts

Maximum Ratings (TJ = 25°C unless otherwise stated)

Parameter	Symbol	Value	Units
Drain-to-Source Voltage	VDSS	30	V
Gate-to-Source Voltage	VGS	±20	V
Continuous Drain Current (TA = 25°C)	ID	270	mA
Continuous Drain Current (TA = 85°C)	ID	200	mA
Power Dissipation (TA = 25°C)	PD	330	mW
Pulsed Drain Current (t = 10 µs)	IDM	800	mA
Operating Junction and Storage Temperature	TJ, TSTG	-55 to 150	°C
Source Current (Body Diode)	IS	270	mA
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)	TL	260	°C

Electrical Characteristics (TJ = 25°C unless otherwise stated)

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-to-Source Breakdown Voltage	V(BR)DSS	VGS = 0 V, ID = 100 µA	30	-	-	V
Drain-to-Source Breakdown Voltage Temperature Coefficient	V(BR)DSS/TJ	-	60	-	-	mV/°C
Zero Gate Voltage Drain Current	IDSS	VGS = 0 V, VDS = 30 V	-	-	1.0	µA
Gate-to-Source Leakage Current	IGSS	VDS = 0 V, VGS = ±10 V	-	-	±1.0	µA
Gate Threshold Voltage	VGS(TH)	VGS = VDS, ID = 100 µA	0.8	1.2	1.5	V
Gate Threshold Temperature Coefficient	VGS(TH)/TJ	-	-3.4	-	-	mV/°C
Drain-to-Source On Resistance (VGS = 4.0 V, ID = 10 mA)	RDS(on)	-	1.0	1.5	-	Ω
Drain-to-Source On Resistance (VGS = 2.5 V, ID = 10 mA)	RDS(on)	-	1.5	2.0	-	Ω
Forward Transconductance	gFS	VDS = 3.0 V, ID = 10 mA	-	80	-	mS
Input Capacitance	CISS	VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V	20	33	-	pF
Output Capacitance	COSS	-	19	32	-	pF
Reverse Transfer Capacitance	CRSS	-	7.25	12	-	pF
Total Gate Charge	QG(TOT)	VGS = 5.0 V, VDS = 24 V, ID = 0.1 A	0.9	1.3	-	nC
Threshold Gate Charge	QG(TH)	-	0.2	-	-	nC
Gate-to-Source Charge	QGS	-	0.3	-	-	nC
Gate-to-Drain Charge	QGD	-	0.2	-	-	nC

Switching Characteristics (Note 3)

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	td(ON)	VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA, RG = 50 Ω	-	17	-	ns
Rise Time	tr	-	-	23	-	ns
Turn-Off Delay Time	td(OFF)	-	-	94	-	ns
Fall Time	tf	-	-	82	-	ns

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Forward Diode Voltage (TJ = 25°C)	VSD	VGS = 0 V, IS = 10 mA	0.65	0.7	-	V
Forward Diode Voltage (TJ = 125°C)	VSD	VGS = 0 V, IS = 10 mA	0.43	-	-	V
Reverse Recovery Time	tRR	VGS = 0 V, dIS/dt = 8.0 A/µs, IS = 10 mA	-	5.0	-	ns

Mechanical Dimensions

Dimension	Value (mm)	Value (Inches)
Length (L)	2.00 ± 0.10	0.079 ± 0.004
Width (W)	1.20 ± 0.10	0.047 ± 0.004
Thickness (T)	0.90 ± 0.10	0.035 ± 0.004
A1	0.00 to 0.10	0.000 to 0.004
A2	0.70 REF	0.028 REF
b	0.30 to 0.40	0.012 to 0.016
c	0.10 to 0.25	0.004 to 0.010
D	1.80 to 2.20	0.071 to 0.087
E	1.15 to 1.35	0.045 to 0.053
e	1.20 to 1.40	0.047 to 0.055
e1	0.65 BSC	0.026 BSC
HE	0.035 to 0.040	0.001 to 0.002

Ordering Information

Part Number: NTS4001NT1G
Package: SC-70 (Pb-Free)
Quantity: 3000 / Tape & Reel

Marking Diagram

Device Code: TD
Date Code: M
Pb-Free Indicator: G or microdot (�)

Important Notice

Commercial-Off-The-Shelf (COTS) Products: Suitable for Commercial, Industrial, and Automotive Applications.
Not for High-Reliability Applications: Not specifically designed for Military, Aviation, Aerospace, Life-Dependent Medical applications, or any application requiring high reliability.
Contact onsemi: For applications requiring high reliability and/or presenting an extreme operating environment, written consent and authorization from onsemi is required.

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