Infineon Technologies PTFB193408SVV1XWSA1

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
PTFB193408SVV1XWSA1
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
PTFB193408SVV1XWSA1_Datesheet
Description:
RF MOSFET LDMOS 30V H-34275G-6
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Specifications

Type

Paramete

Type

Paramete

Voltage - Rated

65 V

Current - Test

2.65 A

Package / Case

H-34275G-6/2

Voltage - Test

30 V

Current Rating (Amps)

Grade

Gain

19dB

Configuration

Dual, Common Source

Frequency

1.99GHz

Noise Figure

Power - Output

80W

Supplier Device Package

H-34275G-6/2

Mounting Type

Chassis Mount

Qualification

Technology

LDMOS

Overview

Infineon PTFB193408SVV1XWSA1 Product Information

Name: PTFB193408SVV1XWSA1
Brand: Infineon Technologies
SKU: JM-PTFB193408SVV1XWSA1
Availability: InStock

Product Overview

The PTFB193408SVV1XWSA1 is a high-power RF LDMOS FET designed for multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. This device offers excellent thermal performance, high gain, and integrated input/output matching, making it suitable for demanding applications.

Key Features

High Power Output: 340W
Frequency Range: 1930–1990 MHz
Supply Voltage: 30V
Broadband Internal Matching: For efficient operation across the frequency band
Wide Video Bandwidth: Ensures high performance in various applications
Single-Carrier WCDMA Performance:Output Power: 100WEfficiency: 33%Gain: 19.0 dBPAR: 7.5 dB @ 0.01% CCDFACPR @ 5MHz: –35 dBc
Increased Negative Gate-Source Voltage Range: For improved performance in Doherty amplifiers
Handling Capability: 10:1 VSWR at 30V, 340W (CW) output power
Integrated ESD Protection: Ensures robustness against electrostatic discharge
Excellent Thermal Stability: Ensures reliable operation under varying conditions
RoHS-Compliant: Environmentally friendly design

Ordering Information

Part Number: PTFB193408SVV1XWSA1
Package: H-34275G-6/2, ceramic open-cavity, formed leads, earless
Shipping: Tape & Reel, 250 pcs

RF Characteristics

Single-Carrier WCDMA Measurements (tested in Infineon test fixture)

Conditions: VDD = 30V, IDQ = 2.65A, POUT = 80W average, f = 1990MHz
Signal: 3GPP, 3.84MHz channel bandwidth, with 10dB peak/average @ 0.01% CCDF
TableCopy

Characteristic	Symbol	Min	Typ	Max	Unit
Gain	Gps	18	19	—	dB
Drain Efficiency	nD	29	31	—	%
Adjacent Channel Power Ratio	ACPR	—	-32	-30	dBc

Two-Carrier WCDMA Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture)

Conditions: VDD = 30V, IDQ = 2.6A, POUT = 80W average, f1 = 1980MHz, f2 = 1990MHz
Signal: 3GPP, 3.84MHz channel bandwidth, 8.0dB peak/average @ 0.01% CCDF
TableCopy

Characteristic	Symbol	Min	Typ	Max	Unit
Gain	Gps	—	19.5	—	dB
Drain Efficiency	nD	—	29	—	%
Intermodulation Distortion	IMD	—	-33	—	dBc

Two-Tone Characteristics (not subject to production test—verified by design/characterization in Infineon test fixture)

Conditions: VDD = 30V, IDQ = 2.6A, POUT = 265W PEP, f = 1990MHz, tone spacing = 1MHz
TableCopy

Characteristic	Symbol	Min	Typ	Max	Unit
Gain	Gps	—	19.5	—	dB
Drain Efficiency	nD	—	36	—	%
Intermodulation Distortion	IMD	—	-30	—	dBc

DC Characteristics

Conditions: VGS = 0V, VDS = 30V, IDQ = 2.6A

TableCopy

Characteristic	Symbol	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	65	—	—	V
Drain Leakage Current	IDSS	—	—	1.0	µA
On-State Resistance	RDS(on)	—	0.05	—	Ω
Operating Gate Voltage	VGS	2.3	2.8	3.3	V
Gate Leakage Current	IGSS	—	—	1.0	µA

Maximum Ratings

TableCopy

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDsS	65	V
Gate-Source Voltage	VGS	-6 to +10	V
Junction Temperature	TJ	200	℃
Storage Temperature Range	TSTG	-40 to +150	℃
Thermal Resistance (TcAsE=70C, 300 W CW)	RoJC	0.2	C/W

Package Outline Specifications

Package Type: H-34275G-6/2 (formed leads)
Dimensions:Length: 30.61 mm [1.205 inches]Width: 22.22 mm [0.875 inches]Height: 10.16 mm [0.400 inches]
Lead Thickness: 0.13 mm ± 0.051 mm [0.005 inches ± 0.002 inches]
Gold Plating Thickness: 0.25 micron [10 microinches]

Pinout Diagram

V1, V2: VDD
G1, G2: Gate
D1, D2: Drain
S: Source (flange)

Reference Circuit

Input Components:Capacitors: 1 µF, 10 µF, 18 pF, 1.5 pF, 1,000 pFInductors: 22 nHResistors: 10 Ω, 100 Ω, 1,300 Ω, 1,200 Ω
Output Components:Capacitors: 220 µF, 4.7 µF, 10 µF

Revision History

Rev. 03 (2015-10-01): Updated data sheet with new performance characteristics and package information.

Legal Disclaimer

The information in this document is provided as a guide and should not be considered a guarantee of conditions or characteristics. Infineon Technologies disclaims any and all warranties and liabilities of any kind, including warranties of non-infringement of intellectual property rights of any third party.

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