Vishay SI7431DP-T1-GE3

View All Single, Pre-Biased Bipolar Transistors by Vishay

Part Number:
SI7431DP-T1-GE3
Manufacturer:
Vishay
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
SI7431DP-T1-GE3_Datesheet
Description:
MOSFET P-CH 200V 2.2A PPAK SO-8
In stock 6,981

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Specifications

Type

Paramete

Type

Paramete

Qualification

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

200 V

Package / Case

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds

Vgs (Max)

±20V

Rds On (Max) @ Id, Vgs

174mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

FET Type

P-Channel

Power Dissipation (Max)

1.9W (Ta)

Technology

MOSFET (Metal Oxide)

Supplier Device Package

PowerPAK® SO-8

FET Feature

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Grade

Mounting Type

Surface Mount

Gate Charge (Qg) (Max) @ Vgs

135 nC @ 10 V

Overview

SI7431DP‑T1‑GE3 – Complete Datasheet Summary

1. Basic Identification

Full Part Number: SI7431DP‑T1‑GE3
Manufacturer: Vishay Siliconix
Device Type: P‑Channel TrenchFET® Power MOSFET
Package: PowerPAK® SO‑8 (leadless, low‑profile 1.07 mm)
Compliance: RoHS compliant, halogen‑free, lead‑free
Document: Rev. G, 12‑Dec‑2022, Doc. #: 73116
Marking: Single P‑channel, 200 V rating

2. Key Features

Ultra‑low RDS(on) for high‑efficiency switching
Low thermal resistance PowerPAK package
100% tested for gate resistance (Rg) and avalanche ruggedness
Logic‑level compatible drive
Ideal for space‑constrained designs
Halogen‑free & green molding compound

3. Absolute Maximum Ratings (TA = 25°C)

Parameter	Symbol	Value	Unit
Drain–Source Voltage	VDS	−200	V
Gate–Source Voltage	VGS	±20	V
Continuous Drain Current @ TA = 25°C	ID	−3.8	A
Continuous Drain Current @ TA = 70°C	ID	−3.0	A
Pulsed Drain Current	IDM	−30	A
Single Avalanche Energy	EAS	11	mJ
Max. Power Dissipation @ TA = 25°C	PD	5.4	W
Operating / Storage Temp	TJ, Tstg	−55 to +150	°C
Soldering Peak Temp	—	260	°C

4. Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Junction‑to‑Case (steady)	RthJC	1.0	1.5	°C/W
Junction‑to‑Ambient (steady)	RthJA	50	65	°C/W
Junction‑to‑Ambient (≤10 s pulse)	RthJA	18	23	°C/W

5. Electrical Specifications (TJ = 25°C)

Static Electrical

Parameter	Conditions	Min	Typ	Max	Unit
Drain–Source Breakdown Voltage	VGS = 0 V, ID = −250 µA	−200	—	—	V
Gate Threshold Voltage	VDS = VGS, ID = −250 µA	−2.0	—	−4.0	V
Zero‑Gate Drain Leakage	VDS = −200 V, VGS = 0 V	—	—	−1	µA
On‑State Resistance	VGS = −10 V, ID = −3.8 A	—	0.145	0.174	Ω
On‑State Resistance	VGS = −6 V, ID = −3.6 A	—	0.147	0.180	Ω
Forward Transconductance	VDS = −15 V, ID = −3.8 A	—	17	—	S
Body Diode Forward Voltage	IS = −4.2 A, VGS = 0 V	—	−0.78	−1.2	V

Dynamic Electrical

Parameter	Conditions	Typ	Max	Unit
Total Gate Charge	VGS = −10 V	—	135	nC
Gate–Source Charge	—	16.5	—	nC
Gate–Drain Charge	—	25	—	nC
Turn‑On Delay	VDD = −75 V, ID ≈ −4.8 A	23	40	ns
Rise Time	—	49	75	ns
Turn‑Off Delay	—	110	180	ns
Fall Time	—	66	100	ns
Reverse Recovery Time	IF = −2.9 A	—	120	ns

6. Package & Pinout (PowerPAK SO‑8)

Package Dimensions: 6.15 × 5.15 × 1.07 mm
Pin Assignment:

7. Typical Applications

Active clamp circuits
Intermediate DC/DC converters
High‑side P‑channel switching
Low‑profile power management
Industrial & consumer power systems

8. Ordering Explanation

SI7431DP: Base part number
T1: Tape‑and‑reel packaging
GE3: Halogen‑free + lead‑free (RoHS)

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