Toshiba Semiconductor and Storage TPC8227-H,LQ

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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
8-SOP
Rds On (Max) @ Id, Vgs
33mOhm @ 2.6A, 10V
Technology
MOSFET (Metal Oxide)
Qualification
-
Package / Case
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Mounting Type
Surface Mount
Power - Max
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C
5.1A
Operating Temperature
150°C
Drain to Source Voltage (Vdss)
40V
Input Capacitance (Ciss) (Max) @ Vds
640pF @ 10V
Vgs(th) (Max) @ Id
2.3V @ 100µA
Configuration
2 N-Channel (Dual)
Grade
-
FET Feature
-
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