Texas Instruments(TI) TPIC1502DW

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Specifications
Type
Paramete
Type
Paramete
Package / Case
24-SOIC (0.295", 7.50mm Width)
Input Capacitance (Ciss) (Max) @ Vds
98pF @ 14V
Supplier Device Package
24-SOIC
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20V
Grade
-
Configuration
-
Current - Continuous Drain (Id) @ 25°C
1.5A
Power - Max
2.86W
Operating Temperature
-40°C ~ 150°C (TJ)
Qualification
-
Vgs(th) (Max) @ Id
2.2V @ 1mA
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
300mOhm @ 1.5A, 10V
FET Feature
Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 10V
Overview

DESCRIPTION

· The TPIC1502 is a monolithic power DMOS array with ten isolated N-channel enhancement-mode power DMOS transistors.
· It includes a full H-bridge (four transistors) and a triple half H-bridge (six transistors).
· Features an integrated sense-FET for class A-B operation.
· Packaged in a 24-pin wide-body surface-mount (DW) package.
· Operates within a case temperature range of –40 °C to 125 °C.



FEATURES

· Low RDS(on): 0.25 Ω typical for full H-bridge, 0.4 Ω typical for triple half H-bridge.
· Pulsed current: 4 A per channel.
· Matched sense transistors for class A-B linear operation.
· Fast commutation speed.



APPLICATIONS

· Suitable for power management in motor control systems.
· Ideal for linear operation in class A-B amplifiers.
· Used in applications requiring fast switching and low on-resistance.

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