Good-Ark Semiconductor 1N4148W

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Specifications
Type
Paramete
Type
Paramete
Operating Temperature - Junction
150°C
Voltage - Forward (Vf) (Max) @ If
1 V @ 10 mA
Package / Case
SOD-123
Supplier Device Package
SOD-123
Voltage - DC Reverse (Vr) (Max)
75 V
Grade
-
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
5 µA @ 75 V
Mounting Type
Surface Mount
Reverse Recovery Time (trr)
4 ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Current - Average Rectified (Io)
150mA
Qualification
-
Technology
Standard
Overview

1N4148W Switching Diode Specification Summary

General Description

The 1N4148W is a switching diode designed for high-speed rectification and switching applications. It features a small surface mount package (SOD-123), high breakdown voltage, and fast switching speed. This diode is suitable for consumer, automotive, and telecommunication industries.

Features

  • Small Surface Mount Package: SOD-123
  • High Breakdown Voltage: Ensures robust performance under high voltage conditions.
  • Fast Speed Switching: Suitable for high-frequency applications.
  • High-Speed Switching and Reverse Polarity Protection: Provides protection against reverse voltage.
  • High-Speed Rectifying Applications: Ideal for rectification in various electronic circuits.

Applications

  • Consumer Electronics: General-purpose switching and rectification.
  • Automotive Industry: High-reliability switching applications.
  • Telecommunication Industry: High-speed rectification and protection circuits.

Absolute Maximum Ratings (@TA = 25°C)

  • Peak Repetitive Reverse Voltage (VR): 75V
  • Non-Repetitive Peak Reverse Voltage (VRM): 100V
  • Average Rectified Output Current (IO): 150mA
  • Repetitive Peak Forward Current (IFRM): 300mA
  • Non-Repetitive Peak Forward Surge Current (IFSM): 2.0A @ t=1.0s, 1.0A @ t=1.0µs
  • Power Dissipation (PD): 500mW
  • Thermal Resistance, Junction-to-Ambient (RθJA): 250°C/W
  • Operating Junction Temperature Range (TJ): -55°C to +150°C
  • Storage Temperature Range (TSTG): -55°C to +150°C

Electrical Characteristics (@TA = 25°C)

  • Reverse Current (IR):5.0μA @ VR = 75V100μA @ VR = 100V
  • Forward Voltage (VF):1.0V @ IF = 10mA1.25V @ IF = 100mA
  • Reverse Breakdown Voltage (V(BR)R): 75V
  • Reverse Leakage Current (IR):5μA @ VR = 75V25nA @ VR = 20V50μA @ VR = 20V, TJ = 150°C
  • Capacitance Between Terminals (CT): 4pF @ VR = 0, f = 1MHz
  • Reverse Recovery Time (trr): 4ns @ IF = 10mA, VR = 6.0V, RL = 100Ω, IR = 10mA

Typical Electrical Characteristic Curves

  • Forward Characteristics: Shows the relationship between forward current and forward voltage.
  • Admissible Power Dissipation vs. Ambient Temperature: Indicates the power dissipation limits at different ambient temperatures.
  • Leakage Current vs. Junction Temperature: Demonstrates how reverse leakage current varies with junction temperature.
  • Reverse Capacitance vs. Reverse Voltage: Illustrates the change in reverse capacitance with reverse voltage.
  • Admissible Repetitive Peak Forward Current vs. Pulse Duration: Describes the allowable peak forward current for different pulse durations.

Order Information

  • Device: 1N4148W
  • Package: SOD-123
  • Carrier: Tape & Reel
  • Quantity: 3,000 pcs/Reel
  • Marking: T4

Recommended Pad Layout

  • Dimensions:A: 1.050mm to 1.250mm (0.041" to 0.049")A1: 0.000mm to 0.100mm (0.000" to 0.004")A2: 1.050mm to 1.150mm (0.041" to 0.045")b: 0.450mm to 0.650mm (0.018" to 0.026")c: 0.080mm to 0.150mm (0.003" to 0.006")D: 1.500mm to 1.700mm (0.059" to 0.067")E: 2.600mm to 2.800mm (0.102" to 0.110")E1: 3.550mm to 3.850mm (0.140" to 0.152")L: 0.250mm to 0.450mm (0.010" to 0.018")θ: 0° to 8°
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