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onsemi 2N7002K

View All Single, Pre-Biased Bipolar Transistors by onsemi

Part Number:
2N7002K
Manufacturer:
onsemi
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
2N7002K_Datesheet
Description:
MOSFET N-CH 60V 320MA SOT23
In stock 173,961

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Specifications

Type

Paramete

Type

Paramete

Drain to Source Voltage (Vdss)

60 V

Operating Temperature

-55°C ~ 150°C (TJ)

Qualification

Supplier Device Package

SOT-23-3 (TO-236)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

300mW (Ta)

FET Feature

Input Capacitance (Ciss) (Max) @ Vds

24.5 pF @ 20 V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Technology

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id

2.3V @ 250µA

Package / Case

TO-236-3, SC-59, SOT-23-3

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

0.7 nC @ 4.5 V

Grade

Current - Continuous Drain (Id) @ 25°C

320mA (Ta)

Mounting Type

Surface Mount

Vgs (Max)

±20V

Overview

2N7002K Field Effect Transistor N-Channel, Enhancement Mode

Characteristics

•Minimal On-Resistance

•Low Gate Threshold Voltage

•Low Input Capacitance

•Fast Switching Speed

•Low Input/Output Leakage

•Ultra-Small Surface Mount Package

•ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101

•Pb-Free, Halogen Free/BFR Free, RoHS Compliant

Absolute Maximum Ratings (TA = 25°C unless otherwise specified)

Symbol	Parameter	Value	Unit
VDSS	Drain-Source Voltage	60	V
VDGR	Drain-Gate Voltage (RGS ≤ 1.0 MΩ)	60	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current Continuous	300	mA
	Pulsed	800	mA
TJ	Operating Junction Temperature Range	-55 to +150	°C
TSTG	Storage Temperature Range	-55 to +150	°C

Thermal Characteristics (TA = 25°C unless otherwise specified)

Symbol	Parameter	Value	Unit
PD	Total Device Dissipation	350	mW
	Derate Above TA = 25°C	2.8	mW/°C
RθJA	Thermal Resistance, Junction-to-Ambient (Note 1)	350	°C/W

Electrical Characteristics (TJ = 25°C unless otherwise noted)

OFF CHARACTERISTICS (Note 2)

Symbol	Parameter	Conditions	Min	Max	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS = 0 V, ID = 10 µA	60	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 60 V, VGS = 0 V	-	1.0	µA
		VDS = 60 V, VGS = 0 V, TJ = 125°C	-	500	µA
IGSS	Gate-Body Leakage	VGS = ±20 V, VDS = 0 V	-	±10	µA

ON CHARACTERISTICS (Note 2)

Symbol	Parameter	Conditions	Min	Max	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µA	1.0	2.5	V
RDS(ON)	Static Drain-Source On-Resistance	VGS = 10 V, ID = 0.5 A	-	2	Ω
		VGS = 4.5 V, ID = 200 mA	-	4	Ω
ID(ON)	On-State Drain Current	VGS = 10 V, VDS = 7.5 V	1.5	-	A
gFS	Forward Transconductance	VDS = 10 V, ID = 0.2 A	200	-	mS

DYNAMIC CHARACTERISTICS

Symbol	Parameter	Conditions	Min	Max	Unit
Ciss	Input Capacitance	VDS = 25 V, VGS= 0 V, f = 1.0 MHz	-	50	pF
Coss	Output Capacitance	-	-	15	pF
Crss	Reverse Transfer Capacitance	-	-	6	pF

SWITCHING CHARACTERISTICS

Symbol	Parameter	Conditions	Min	Max	Unit
tD(ON)	Turn-On Delay Time	VDD = 30 V, IDSS = 200 mA, RG = 10 Ω, VGS = 10 V	-	5	ns
tD(OFF)	Turn-Off Delay Time	-	-	30	ns

Ordering Information

Part Number	Top Mark	Package	Shipping
2N7002K	7K	SOT-23 3L (Pb-Free)	3000 / Tape & Reel

Package Dimensions

SOT-23 (TO-236) CASE 318-08

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