A2T21H141W24SR3 Data Sheet Addendum

Overview

The A2T21H141W24SR3 is a 36 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It is optimized for wide instantaneous bandwidth capability, covering the frequency range of 2110 to 2200 MHz. This device is part of NXP Semiconductors' Airfast series, known for high performance in RF power applications.

Features

• Advanced High Performance in-Package Doherty
• Wide Instantaneous Bandwidth Applications
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• High Output VSWR and Broadband Operating Conditions
• Designed for Digital Predistortion Error Correction Systems

Applications

• Cellular Base Stations
• Wideband Communication Systems
• High Efficiency RF Power Amplifiers

Maximum Ratings

• Drain-Source Voltage (VDS): -0.5V to +65V
• Gate-Source Voltage (VGS): -6.0V to +10V
• Operating Voltage (VDD): 0V to +32V
• Storage Temperature Range (Tstg): -65°C to +150°C
• Case Operating Temperature Range (Tc): -40°C to +150°C
• Operating Junction Temperature Range (Tj): -40°C to +225°C

Thermal Characteristics

• Thermal Resistance, Junction to Case (RθJC): 0.44°C/W (at 76°C case temperature, 36W avg., W-CDMA, 28Vdc, IDQA = 400mA, VGSB = 0.65Vdc, 2140MHz)

ESD Protection Characteristics

• Human Body Model (per JS-001-2017): Class 2
• Charge Device Model (per JS-002-2014): Class C3

Electrical Characteristics (TA = 25°C unless otherwise noted)

• Zero Gate Voltage Drain Leakage Current (IDSS):VDS = 65V, VGS = 0V: Max 10µAVDS = 32V, VGS = 0V: Max 5µA
• Gate-Source Leakage Current (IGSS): VGS = 5V, VDS = 0V: Max 1µA
• Gate Threshold Voltage (VGS(th)):Side A (Carrier): 0.8V to 1.6VSide B (Peaking): 0.8V to 1.6V
• Drain-Source On-Voltage (VDS(on)):Side A (Carrier): 0.1V to 0.3VSide B (Peaking): 0.1V to 0.3V

Functional Tests (In NXP Doherty Test Fixture, 50 ohm system)

• Power Gain (Gps): 16.4dB to 19.4dB
• Drain Efficiency (ηD): 47.5% to 50.6%
• Output Peak-to-Average Ratio (PAR): 6.7dB to 7.3dB
• Adjacent Channel Power Ratio (ACPR): -31.9dBc to -27.0dBc

Load Mismatch

• VSWR 10:1 at 32Vdc, 170W CW Output Power: No Device Degradation

Typical Performance (In NXP Doherty Test Fixture, 50 ohm system)

• Output Power at 3dB Compression Point (P3dB): 158W
• AM/PM: -22°
• VBW Resonance Point: 160MHz
• Gain Flatness in 90MHz Bandwidth @ Pout = 36W Avg.: ±0.16dB
• Gain Variation over Temperature (-30°C to +85°C): ±0.008dB/°C
• Output Power Variation over Temperature (-30°C to +85°C): ±0.006dB/°C

Ordering Information

• Part Number: A2T21H141W24SR3
• Package: R3
• Tape and Reel Information: Suffix = 250 Units, 44mm Tape Width, 13-inch Reel
• NI-780S-4L2L

Pin Configuration (Top View)

TableCopy

Test Circuit Component Layout

• VDDA and VDDB must be tied together and powered by a single DC power supply.
• Part internally matched both on input and output.

Additional Information

• Datasheet: For detailed electrical and mechanical specifications, refer to the A2T21H141W24SR3 datasheet available on the NXP Semiconductors website.
• Support: For further assistance, contact NXP Semiconductors customer support or visit their website for technical support and discussions.