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NXP A3G23H500W17SR3
- Part Number:
A3G23H500W17SR3
- Manufacturer:
- Category:
- RoHs:
Non-RoHS Compliant - Datasheet:
- Description:
RF MOSFET GAN 48V NI780
- In stock 0
A3G23H500W17SR3 – Accessories and Ordering Information
Product Name:
A3G23H500W17SR3 – RF Power GaN Transistor
Device Type:
Asymmetrical Doherty RF Power GaN Transistor
Application:
Cellular base station applications (2300–2400 MHz)
Device Description
- Average Output Power: 80 W
- Frequency Range: 2300–2400 MHz
- Voltage Supply (VDD): 48 V
- Technology: Airfast™ GaN
- Package Type: NI-780S-4S2S
- Configuration: Internally input matched
- Doherty Structure: Advanced in-package Doherty
- Key Features: High terminal impedance for broadband performance High efficiency and power gain Wideband ruggedness Robust against high VSWR Excellent ACPR performance
Performance Summary (Typical at 2300 MHz)
| Parameter | Value |
|---|---|
| Power Gain (Gps) | 14.5 dB |
| Drain Efficiency (ηD) | 53.7% |
| Output PAR | 8.4 dB |
| ACPR | –30.5 dBc |
| P3dB (Compression Power) | ~603 W |
| Gain Flatness (100 MHz BW) | 0.25 dB |
Ordering Information
| Ordering Code | Package | Format |
|---|---|---|
| A3G23H500W17SR3 | NI-780S-4S2S | Tape & Reel (R3 Suffix = 250 Units, 13" Reel, 44mm Tape Width) |
Production Test Circuit Accessory Components
| Part | Description | Part Number | Manufacturer |
|---|---|---|---|
| C1, C8, etc. | 10 µF Chip Capacitor | C5750X7S2A106M | TDK |
| C2, C4, etc. | 11 pF Chip Capacitor | 600F110JT250XT | ATC |
| C3 | 1.2 pF Chip Capacitor | 600F1R2BT250XT | ATC |
| C20 | 0.3 pF Chip Capacitor | 600F0R3BT250XT | ATC |
| R1 | 50 Ω, 10 W Termination Resistor | C10A50Z4 | Anaren |
| R2, R3 | 3.6 Ω, 1/4 W Chip Resistor | CRCW12063R60FKEA | Vishay |
| Z1 | 2300–2700 MHz Hybrid Coupler | X3C25P1-04S | Anaren |
| PCB | Rogers RO4350B, 0.020", εr = 3.66 | D140827 | MTL |
Notes
- Pb-Free: Yes
- Thermal Resistance: RθJC (IR): 0.53 °C/W RθCHC (FEA): 0.96 °C/W
- Biasing Sequence: Proper ON/OFF gate and drain voltage order is required to prevent damage.
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