NXP BCX56,135

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Specifications
Type
Paramete
Type
Paramete
Voltage - Collector Emitter Breakdown (Max)
80 V
Current - Collector (Ic) (Max)
1 A
Package / Case
TO-243AA
Power - Max
1.25 W
Mounting Type
Surface Mount
Supplier Device Package
SOT-89
Transistor Type
NPN
Qualification
-
Operating Temperature
150°C (TJ)
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Grade
-
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
180MHz
Overview

BCX56 Datasheet Summary

General Description

The BCX56 is a medium power NPN transistor. It is designed for a wide range of applications and is housed in a SOT89 (SC-62) plastic surface-mounted package.

Features and Benefits

  • High Collector Current Capability: It can handle a collector current (IC) of up to 1 A.
  • Three Current Gain Selections: This series offers different current gain options to suit various applications.
  • High Power Dissipation Capability: It can dissipate a significant amount of power, making it suitable for demanding applications.

Applications

The BCX56 is suitable for applications such as:

  • Linear voltage regulators
  • MOSFET drivers
  • Low-side switches
  • Battery-driven devices
  • Power management
  • Amplifiers

Quick Reference Data

TableCopy


ParameterConditionsMinTypMaxUnit
VCEO (collector-emitter voltage)open base--80V
IC (collector current)--1-A
ICM (peak collector current)single pulse; tp ≤ 1 ms-2-A
hFE (DC current gain)VCE = 2 V; IC = 150 mA63250--

Pinning Information

TableCopy


PinSymbolDescription
1EEmitter
2CCollector
3BBase

Ordering Information

  • Package Type: SC-62 plastic surface-mounted package
  • Version: BCX56

Marking

  • Type Number: BCX56
  • Marking Code: BH

Limiting Values

TableCopy


ParameterConditionsMinMaxUnit
VCBO (collector-base voltage)open emitter-100V
VCEO (collector-emitter voltage)open base-80V
VEBO (emitter-base voltage)open collector-5V
IC (collector current)--1A
ICM (peak collector current)single pulse; tp ≤ 1 ms-2A
IB (base current)--0.3A
IBM (peak base current)single pulse; tp ≤ 1 ms-0.3A
Ptot (total power dissipation)Tamb ≤ 25 °C-0.50 (FR4 PCB, standard footprint) / 0.95 (FR4 PCB, 1 cm² collector pad) / 1.35 (FR4 PCB, 6 cm² collector pad)W
Tj (junction temperature)--150°C
Tamb (ambient temperature)--55150°C
Tstg (storage temperature)--65150°C

Thermal Characteristics

TableCopy


ParameterConditionsMinTypMaxUnit
Rth(j-a) (thermal resistance from junction to ambient)FR4 PCB, single-sided copper, tin-plated, standard footprint-250-K/W
Rth(j-a) (thermal resistance from junction to ambient)FR4 PCB, single-sided copper, tin-plated, 1 cm² collector pad-132-K/W
Rth(j-a) (thermal resistance from junction to ambient)FR4 PCB, single-sided copper, tin-plated, 6 cm² collector pad-93-K/W
R(j-sp) (thermal resistance from junction to solder point in free air)--16-K/W

Characteristics

TableCopy


ParameterConditionsMinTypMaxUnit
V(BR)CBO (collector-base breakdown voltage)IC = 100 µA; IE = 0 A--100V
V(BR)CEO (collector-emitter breakdown voltage)IC = 2 mA; IB = 0 A--80V
V(BR)EBO (emitter-base breakdown voltage)IE = 100 µA; IC = 0 A--5V
ICBO (collector-base cut-off current)VCB = 30 V; IE = 0 A; Tj = 150 °C--10µA
IEBO (emitter-base cut-off current)VEB = 5 V; IC = 0 A--100nA
hFE (DC current gain)VCE = 2 V; IC = 5 mA63---
hFE (DC current gain)VCE = 2 V; IC = 150 mA63250--
hFE (DC current gain)VCE = 2 V; IC = 500 mA40---
VCEsat (collector-emitter saturation voltage)IC = 500 mA; IB = 50 mA--0.5V
VBE (base-emitter voltage)VCE = 2 V; IC = 500 mA--1V
Cc (collector capacitance)VCB = 10 V; IE = ie = 0 A; f = 1 MHz-6-pF
fT (transition frequency)VCE = 5 V; IC = 50 mA; f = 100 MHz100180-MHz

Package Outline

The BCX56 is packaged in a SOT89 (SC-62) plastic surface-mounted package. The dimensions are provided in the datasheet for reference.


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