BSS84LT1 Product Summary

Basic Information

• Part Number: BSS84LT1
• Package Type: SOT-23 (Pb-Free)
• Shipping Quantity: 3000 per Tape & Reel
• Case Style: CASE 318 STYLE 21

General Description

The BSS84LT1 is a single P-Channel MOSFET designed for power applications. It features a SOT-23 surface mount package, which saves board space. The device is suitable for automotive and other applications requiring unique site and control change requirements, and is AEC-Q101 qualified and PPAP capable. The BSS84LT1 is Pb-Free and RoHS compliant.

Features

• Drain-Source Voltage (VDSS): -50 Vdc
• Drain Current (ID):Continuous: -130 mAPulsed: -520 mA
• On-State Resistance (RDS(on)): 10 Ω @ VGS = -10 V
• Miniature SOT-23 Surface Mount Package
• Automotive Grade: BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• RoHS Compliance: Pb-Free

Marking Diagram & Pin Assignment

• Device Code: PD
• Date Code: M
• Pb-Free Package Indicator: �
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain

Ordering Information

• BSS84LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel
• BVSS84LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel
• SBSS84LT1G: SOT-23 (Pb-Free), 3000 per Tape & Reel
• BSS84LT7G: SOT-23 (Pb-Free), 3500 per Tape & Reel

Maximum Ratings (@TJ = 25°C, unless otherwise noted)

• Drain-Source Voltage (VDSS): -50 Vdc
• Gate-Source Voltage (VGS): ±20 Vdc
• Drain Current (ID):Continuous: -130 mAPulsed: -520 mA
• Total Power Dissipation (PD): 225 mW
• Operating and Storage Temperature Range (TJ, TSTG): -55 to +150 °C
• Thermal Resistance, Junction-to-Ambient (RθJA): 556 °C/W
• Maximum Lead Temperature for Soldering Purposes (TL): 260 °C

Electrical Characteristics (@TA = 25°C, unless otherwise noted)

• OFF CHARACTERISTICS:Drain-Source Breakdown Voltage (V(BR)DSS): -50 V (VGS = 0 V, ID = -250 µA)Zero Gate Voltage Drain Current (IDSS):VDS = -25 V, VGS = 0 V: -0.1 µAVDS = -50 V, VGS = 0 V: -15 µAVDS = -50 V, VGS = 0 V, TJ = 125°C: -60 µAGate-Body Leakage Current (IGSS): ±10 nA (VGS = ±20 V, VDS = 0 V)
• ON CHARACTERISTICS:Gate-Source Threshold Voltage (VGS(th)): -0.9 to -2.0 V (VDS = VGS, ID = -250 µA)Static Drain-Source On-Resistance (RDS(on)): 4.7 to 10 Ω (VGS = -5.0 V, ID = -100 mA)Transfer Admittance (|yfs|): 50 mS (VDS = -25 V, ID = -100 mA, f = 1.0 kHz)
• DYNAMIC CHARACTERISTICS:Input Capacitance (Ciss): 36 pF (VDS = 5.0 V)Output Capacitance (Coss): 17 pFTransfer Capacitance (Crss): 6.5 pF
• SWITCHING CHARACTERISTICS:Turn-On Delay Time (td(on)): 3.6 ns (VDD = -15 V, ID = -2.5 A, RL = 50 Ω)Rise Time (tr): 9.7 nsTurn-Off Delay Time (td(off)): 12 nsFall Time (tf): 1.7 nsGate Charge (QT): 2.2 nC (VDD = -40 V, ID = -0.5 A, VGS = -10 V)
• SOURCE-DRAIN DIODE CHARACTERISTICS:Continuous Current (IS): -0.130 APulsed Current (ISM): -0.520 AForward Voltage (VSD): -2.2 V (VGS = 0 V, IS = -130 mA)

Typical Electrical Characteristics

• Transfer Characteristics: See Figure 1
• On-Region Characteristics: See Figure 2
• On-Resistance versus Drain Current: See Figures 3, 4
• On-Resistance Variation with Temperature: See Figure 5
• Gate Charge: See Figure 6
• Body Diode Forward Voltage: See Figure 7

Mechanical Case Outline Package Dimensions

• SOT-23 (TO-236): 2.90x1.30x1.00 mm
• Pin Configuration:Pin 1: GatePin 2: SourcePin 3: Drain