Micron Technology Inc. MT25QU256ABA1EW9-0SIT


- Part Number:
MT25QU256ABA1EW9-0SIT
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant - Datasheet:
- Description:
IC FLASH 256MBIT SPI 8WPDFN
- In stock 392
MT25QU256ABA1EW9-0SIT – Comprehensive Datasheet Summary
1. Basic Device Information
- Part Number: MT25QU256ABA1EW9-0SIT
- Manufacturer: Micron Technology
- Product Type: 3V Multiple I/O Serial NOR Flash Memory
- Density: 256 Mb (32 MB)
- Organization: 64M × 4-bit
- Status: Active (Production)
- RoHS / Green: Compliant (Lead-free, halogen-free)
- ESD Class: Class 1A
- MSL Level: MSL 3 (168 hours)
- Document Revision: Refer to MT25Q/MT25QL 256Mb datasheet (Rev I, updated 2024)
2. Key Features
- High-speed SPI, Dual SPI, Quad SPI interface
- Up to 133 MHz clock frequency
- Execute-in-Place (XIP) support for direct code execution
- Advanced write protection & sector lock features
- Flexible sector / block erase architecture
- Low power consumption
- Internal HOLD# / RESET# function (DQ3 control)
- Robust reliability: high endurance & long data retention
3. Electrical Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Supply Voltage (VCC) | 2.7 | 3.0 / 3.3 | 3.6 | V |
| Max Operating Frequency | — | — | 133 | MHz |
| Active Read Current | — | — | 35 | mA |
| Program Current | — | — | 35 | mA |
| Page Program Time | — | — | 1.8 | ms |
| Sector Erase Time | — | — | 1 | sec |
| Endurance | 100,000 | — | — | cycles |
| Data Retention | — | 20 | — | years |
4. Absolute Maximum Ratings
- VCC: −0.5 V to +4.0 V
- Voltage on any I/O: −0.5 V to VCC + 0.5 V
- Storage Temperature: −65 °C to +150 °C
- Operating Temperature: −40 °C to +85 °C
- ESD (HBM): 250 V
5. Package & Mechanical Data
- Package: 8‑pin W‑PDFN with Exposed Pad (EP)
- Dimensions: 8.00 mm × 6.00 mm × 0.80 mm
- Pin Count: 8
- Packaging: Tape and reel
- Reel Quantity: 4000 units
- Dry Pack Qty: 1920 units
- Mounting: Surface‑mount (SMT)
- Exposed Pad: Internally tied to VSS; connect to GND
6. Pin Definitions (8‑Pin W‑PDFN)
| Pin | Symbol | Description |
|---|---|---|
| 1 | S# | Chip Select (active low) |
| 2 | DQ0 | Serial I/O 0 |
| 3 | DQ1 | Serial I/O 1 |
| 4 | VSS | Ground |
| 5 | DQ2 | Serial I/O 2 |
| 6 | DQ3 | Serial I/O 3 / HOLD# / RESET# |
| 7 | VCC | Power Supply |
| 8 | CLK | Serial Clock |
| EP | Exposed Pad | Connect to VSS (GND) |
7. Memory Architecture
- Page Size: 256 Bytes
- Sector Size: 4 kB
- Block Size: 64 kB
- Uniform / Flexible Erase: Sector / Block / Chip erase
- Boot Block: Supported
- OTP Security Area: Available
8. Supported Interface Modes
- Standard SPI (1‑I/O)
- Dual SPI (2‑I/O)
- Quad SPI (4‑I/O)
- High‑speed read commands for fast fetch
- XIP mode for direct code execution
9. Operating Temperature Range
- Industrial: −40 °C to +85 °C
10. Typical Applications
- Embedded system firmware storage
- IoT & wireless module code storage
- Consumer electronics
- Industrial controllers
- Automotive infotainment & body modules
- Execute-in-Place (XIP) MCU systems
- Data logging & configuration storage
11. Reliability & Quality
- RoHS / Reach compliant
- MSL 3: 168‑hour floor life
- JEDEC standard qualification
- 100k program/erase cycles
- 20‑year data retention at 85 °C
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Micron Technology Inc.

Micron Technology Inc.
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.











