Micron MT62F2G32D4DS‑023 WT:C – LPDDR5X SDRAM Complete Attachment Summary

1. Basic Identification

• Manufacturer: Micron Technology, Inc.
• Part Number: MT62F2G32D4DS‑023 WT:C
• Device Type: LPDDR5X SDRAM (Mobile Low‑Power DDR5X)
• Total Density: 64Gb (8GB)
• Organization: 2Gb × 32 (2G x32)
• Die Configuration: D4 = 4 die in package
• Speed Grade: -023 → Data rate = 8533 Mb/s; tWCK = 234 ps
• Voltage Grade: F = VDD1=1.80V, VDD2H=1.05V, VDDQ=0.5V
• Temperature Grade: WT = −25°C to +85°C
• Package: DS = 315‑ball TFBGA, 12.4mm × 15.0mm × 1.1mm (max)
• Revision: :C = Third generation
• Compliance: RoHS‑compliant, halogen‑free (“green”)
• Document Revision: Rev. F (05/2024)

2. Key Architecture & Features

• Max Bandwidth: Up to 17.1 GB/s per channel
• Clock Ratio: Selectable WCK:CK = 2:1 or 4:1 (CKR)
• Prefetch: 16n‑bit / 32n‑bit
• Bank Architecture: Supports 8‑bank, bank‑group (BG), and 16‑bank modes
• Burst Length: Programmable BL = 16 or 32 (bank‑group / 16‑bank modes)
• Calibration: Background ZQ & command‑based ZQ calibration
• Reliability: Optional link ECC (read/write link protection)
• Power Saving: Partial‑array self‑refresh (PASR) & partial‑array auto‑refresh (PAAR)
• Low‑Voltage I/O: LVSTL 0.5/0.3, low‑swing single‑ended, VSS‑terminated
• Programmable Features:

3. Memory Organization

• Configuration: 2Gb × 32 (dual‑channel, dual‑rank, 4‑die stack)
• Channel: Dual‑channel (A/B), ×16 per channel
• Bank Groups: 4 bank groups; 16 banks total
• Page Size: 2048 bytes (2KB)
• Addressing: Row = 16 bits; Column = 6 bits; Bank = 4 bits
• Native Burth Length: 16

4. Speed & Timing Parameters

• Data Rate: 8533 MT/s
• WCK Cycle Time (tWCK): 234 ps
• Refresh Timing (16Gb die):

5. DC & Operating Conditions

Recommended Operating Voltages

• VDD1: 1.70–1.95V (typ 1.80V)
• VDD2H: 1.01–1.12V (typ 1.05V)
• VDD2L: Same as VDD2H or 0.87–0.97V (typ 0.90V)
• VDDQ: 0.50V (typ); 0.45V typ (≤7500 Mb/s); 0.30V typ (ODT off)

Temperature

• Operating (TC): −25°C to +85°C (WT grade)
• Storage: −65°C to +150°C

6. Package & Mechanical

• Package Code: DS
• Type: 315‑ball TFBGA
• Dimensions: 12.4mm × 15.0mm (typ); max thickness 1.1mm
• Ball Pitch: 0.475mm ±0.05
• Solder: SACQ (Sn‑4Ag‑0.5Cu‑3Bi‑0.05Ni)
• Thermal Impedance:

7. Signal Interface

• Differential clocks: CK_t/CK_c, WCK_t/WCK_c
• Optional differential read strobe: RDQS_t/RDQS_c
• Command/Address: CA[6:0] per channel
• Data: DQ[15:0] per channel (×32 total)
• Data mask/inversion: DMI[1:0] per channel
• ZQ calibration reference pin
• Asynchronous RESET_n

8. Power Consumption (IDD, WT, Single Die, 8533 Mb/s, x16)

• Active (IDD0): VDD1=3.2mA; VDD2H=29mA
• Standby (IDD2N): VDD1=1.5mA; VDD2H=17mA
• Read (IDD4R): VDD1=12mA; VDD2H=485mA; VDDQ=126mA
• Write (IDD4W): VDD1=11mA; VDD2H=335mA
• Refresh (IDD5): VDD1=23mA; VDD2H=165mA
• Self‑Refresh (IDD6 @85°C): VDD1=3.3mA; VDD2H=13mA

9. Key Mode Register Features

• Bank/BG organization control (MR3)
• Read/write link ECC enable (MR22)
• DFE (decision feedback equalization) support (MR24)
• RDQS training control (MR26)
• DVFSC / E‑DVFSC support (MR41)
• Refresh multiplier & temperature‑dependent refresh (MR4, MR27)
• ODT timing & driver strength control

10. Reliability & Endurance

• JEDEC JESD209‑4 compliant
• Data retention: 10 years @ 85°C
• ECC‑protected data transfer
• Power‑up write protection
• RoHS & halogen‑free manufacturing