onsemi MUN5113T1

View All Single, Pre-Biased Bipolar Transistors by onsemi

Part Number:
MUN5113T1
Manufacturer:
onsemi
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
MUN5113T1_Datesheet
Description:
TRANS PREBIAS PNP 50V SC70-3
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Specifications

Type

Paramete

Type

Paramete

Current - Collector (Ic) (Max)

100 mA

Current - Collector Cutoff (Max)

500nA

Resistor - Emitter Base (R2)

47 kOhms

Qualification

Resistor - Base (R1)

47 kOhms

Frequency - Transition

Supplier Device Package

SC-70-3 (SOT323)

Transistor Type

PNP - Pre-Biased

Power - Max

202 mW

Voltage - Collector Emitter Breakdown (Max)

50 V

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Mounting Type

Surface Mount

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Package / Case

SC-70, SOT-323

Grade

Overview

MUN5113T1 – Complete Datasheet Summary

50 V, 100 mA PNP Digital Bias-Resistor Transistor, 47 kΩ + 47 kΩ, SC-70, 3 k-pc Reel

1. Device Identity

Type: PNP silicon “digital transistor” with monolithic bias-resistor network
Base part: MUN5113T1 (tape-and-reel suffix “T1” = 7-inch / 3 000-unit reel)
Package: SC-70 (SOT-323) 3-lead, Pb-free, halogen-free, RoHS compliant
Automotive option: add prefix “S” (SMUN5113T1) or “NSV” (NSVMUN5113T1) – AEC-Q101 qualified & PPAP capable

2. Internal Circuit & Pin-out

        R1 = 47 kΩ
  Pin 1 (BASE/INPUT) ───■─── BASE PNP
        R2 = 47 kΩ
               ├─── Pin 2 (EMITTER/GND)
  Pin 3 (COLLECTOR/OUTPUT)

Pin 1: Base / digital input
Pin 2: Emitter / ground
Pin 3: Collector / switched output

3. Absolute Maximum Ratings (TA = 25 °C)

Parameter	Symbol	Rating	Unit
Collector-base voltage	VCBO	50	V
Collector-emitter voltage	VCEO	50	V
Collector current	IC	100	mA
Device dissipation (Note 1)	PD	202	mW
Junction temperature	TJ	150	°C
Storage temperature	Tstg	–55 … +150	°C Note 1: FR-4 minimum pad; derate 1.6 mW/°C above 25 °C.

4. Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Junction-to-ambient (min pad)	RθJA	—	618	°C/W
Junction-to-ambient (1-inch pad)	RθJA	—	403	°C/W
Junction-to-lead	RθJL	—	280	°C/W

5. Electrical Characteristics (TA = 25 °C unless noted)

OFF CHARACTERISTICS

Parameter	Test Condition	Min	Typ	Max	Unit
Collector cut-off	VCB = 50 V, IE = 0	—	—	100	nA
Collector-emitter cut-off	VCE = 50 V, IB = 0	—	—	500	nA
Emitter-base cut-off	VEB = 6 V, IC = 0	—	—	0.1	µA

ON CHARACTERISTICS (pulse test 300 µs, 2 % duty)

Parameter	Condition	Min	Typ	Max	Unit
DC current gain hFE	VCE = 10 V, IC = 5 mA	80	—	250	—
Collector-emitter saturation	IC = 10 mA, IB = 1 mA	—	—	0.25	V
Output low voltage (digital)	VCC = 5 V, VB = 0.5 V, RL = 1 kΩ	—	—	0.2	V
Output high leakage	VCC = 5 V, VB = 5.5 V, RL = 1 kΩ	4.9	—	—	V

RESISTOR NETWORK

Resistor	Nominal	Tolerance
R1 (base-series)	47 kΩ	±20 %
R2 (base-emitter)	47 kΩ	±20 %
Ratio R1/R2	1.0	0.8 … 1.2

6. Typical Performance Curves (MUN5113T1G)

VCE(sat) vs IC: <0.15 V @ 20 mA, <0.25 V @ 40 mA
hFE vs IC: flat 120-180 between 1 mA – 50 mA
Cobo: 0.6 pF @ 10 V, 0.8 pF @ 0 V (f = 1 MHz)

7. Applications & Advantages

Direct MCU drive: 47 kΩ base resistor allows 3.3 V/5 V CMOS outputs (≥ 50 µA) to saturate transistor
High-side switch: PNP configuration ideal for switching loads tied to positive rail (LEDs, relays, sensor supplies)
Automotive: AEC-Q101 qualified variant available (SMUN5113T1G / NSVMUN5133T1G)
Space & cost saver: replaces two discrete resistors + PNP in SOT-23; only 2.1 mm² PCB footprint

8. Mounting & Handling

Package: SC-70 (SOT-323) 2.0 × 1.25 × 0.9 mm, 3-lead modified gull-wing
Reflow: JEDEC J-STD-020, Pb-free profile, peak 260 °C
Moisture sensitivity: MSL 1 (unlimited floor life)
Pad layout: 0.65 mm pitch, 0.4 mm pad width – see ON Semi case 419 drawing

9. Ordering Information

Part Number	Marking	Reel Size	Quantity
MUN5113T1G	6C	7-inch	3 000
MUN5113T3G	6C	13-inch	10 000
SMUN5113T1G	6C	7-inch	3 000
NSVMUN5133T1G	6C	7-inch	3 000 Suffix “G” = Pb-free; devices shipped in 8 mm embossed tape per BRD8011.

10. Typical Application Circuit

+12 V
  │
  LOAD (≤ 100 mA)
  │
  ├-- Collector (Pin 3)
MCU GPIO ── 47 k ── Base (Pin 1)
              |
            47 k
              |
GND --------- Emitter (Pin 2)

Logic “0” (< 0.8 V) saturates PNP → load ON; logic “1” (> 5.5 V) turns OFF.

11. Related Parts (same package, different R)

MUN5111T1: 10 k/10 k
MUN5112T1: 22 k/22 k
MUN5114T1: 10 k/47 k
MUN5132T1: 4.7 k/4.7 k
All specifications per ON Semiconductor datasheet MUN5111T1/D, Rev. 12 (March 2012) – verify latest revision before production.

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