onsemi NSVMMUN2113LT3G

View All Single, Pre-Biased Bipolar Transistors by onsemi

Part Number:
NSVMMUN2113LT3G
Manufacturer:
onsemi
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
RoHS Compliant
Datasheet:
NSVMMUN2113LT3G_Datesheet
Description:
TRANS PREBIAS PNP 50V SOT23-3
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Specifications

Type

Paramete

Type

Paramete

Supplier Device Package

SOT-23-3 (TO-236)

Qualification

Resistor - Base (R1)

47 kOhms

Frequency - Transition

Voltage - Collector Emitter Breakdown (Max)

50 V

Current - Collector Cutoff (Max)

500nA

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Package / Case

TO-236-3, SC-59, SOT-23-3

Power - Max

246 mW

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Current - Collector (Ic) (Max)

100 mA

Mounting Type

Surface Mount

Grade

Transistor Type

PNP - Pre-Biased

Resistor - Emitter Base (R2)

47 kOhms

Overview

Information of Device Model NSVMMUN2113LT3G

Name: NSVMMUN2113LT3G
Brand: onsemi
SKU: JM-NSVMMUN2113LT3G
Availability: InStock

1. Basic Product Information

1.1 Product Series

Digital Transistors (BRT) - PNP Transistors with Monolithic Bias Resistor Network

1.2 Core Function

Integrates a single PNP transistor with a monolithic bias resistor network (R1 = 47 kΩ, R2 = 47 kΩ), replacing discrete transistors and external bias resistors to simplify circuit design, reduce board space, and lower component count.

1.3 Key Compliance & Qualifications

AEC-Q101 Qualified and PPAP Capable, suitable for automotive and other applications requiring unique site and control change requirements.
Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

1.4 Discontinuation Status

Marked as DISCONTINUED; not recommended for new designs. For the latest information or alternative solutions, contact an onsemi representative or visit www.onsemi.com.

2. Ordering & Packaging Information

Parameter	Details
Part Marking	A6C
Package Type	SOT−23 (Pb−Free), CASE 318 STYLE 6
Shipping Quantity	10,000 pieces per Tape & Reel
Tape & Reel Specifications	Refer to onsemi’s Tape and Reel Packaging Specifications Brochure (BRD8011/D) for details on part orientation, tape sizes, and related requirements.
Label/Marking Notes	Pb-Free package; marking includes specific device code ("A6C") and date code. A microdot may be present as a Pb-Free indicator (location may vary).

3. Pin Configuration (SOT−23 STYLE 6)

Pin Number	Function	Description
PIN 1	BASE (INPUT)	Connected to the monolithic bias resistor network (R1, R2).
PIN 2	EMITTER (GROUND)	Ground connection terminal.
PIN 3	COLLECTOR (OUTPUT)	Output terminal for the transistor.

4. Maximum Ratings (TA = 25°C)

Rating	Symbol	Maximum Value	Unit
Collector−Base Voltage	VCBO	50	Vdc
Collector−Emitter Voltage	VCEO	50	Vdc
Continuous Collector Current	IC	100	mAdc
Input Forward Voltage	VIN(fwd)	40	Vdc
Input Reverse Voltage	VIN(rev)	10	Vdc
Notes	Stresses exceeding these ratings may damage the device. Device functionality is not guaranteed if limits are violated, and reliability may be impaired.

5. Thermal Characteristics (SOT−23 Package, TA = 25°C Unless Noted)

Characteristic	Symbol	Value (Note 2)	Value (Note 3)	Unit
Total Device Dissipation	PD	246	400	mW
Derate Above 25°C	-	2.0	3.2	mW/°C
Thermal Resistance (Junction to Ambient)	RJA	508	311	°C/W
Thermal Resistance (Junction to Lead)	RJL	174	208	°C/W
Junction and Storage Temperature Range	TJ, Tstg	-55 to +150	-55 to +150	°C
Notes	2. Test condition: FR−4 @ Minimum Pad. 3. Test condition: FR−4 @ 1.0 x 1.0 Inch Pad.

6. Electrical Characteristics (TA = 25°C Unless Noted)

Characteristic	Symbol	Minimum	Typical	Maximum	Unit	Test Conditions
OFF CHARACTERISTICS
Collector-Base Cutoff Current	-	-	-	100	nAdc	VCB = 50V, IE = 0
Collector-Emitter Cutoff Current	ICEO	-	-	500	nAdc	VCE = 50V, IB = 0
Emitter-Base Cutoff Current	-	-	-	0.1	mAdc	VEB = 6.0V, IC = 0
Collector-Base Breakdown Voltage	V(BR)CBO	50	-	-	Vdc	IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	50	-	-	Vdc	IC = 2.0mA, IB = 0 (Note 6)
ON CHARACTERISTICS
DC Current Gain	hFE	-	140	-	-	IC = 5.0mA, VCE = 10V (Note 6)
Collector-Emitter Saturation Voltage	VCE(sat)	-	-	0.25	Vdc	IC = 10mA, IB = 0.3mA (Note 6)
Input Voltage (Off)	Vi(off)	-	-	0.8	Vdc	-
Input Voltage (On)	Vi(on)	1.6	3.0	-	Vdc	VCE = 0.3V, IC = 2.0mA
Output Voltage (On)	VOL	-	-	0.2	Vdc	VCC = 5.0V, VB = 3.5V, RL = 1.0kΩ
Output Voltage (Off)	VOH	4.9	-	-	Vdc	VCC = 5.0V, VB = 0.5V, RL = 1.0kΩ
Input Resistor (R1)	R1	32.9	47	61.1	kΩ	-
Input Resistor Ratio (R2/R1)	-	0.8	1.0	1.2	-	-
Notes	6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Product performance may vary if operated outside the specified test conditions.

7. Package Mechanical Dimensions (SOT−23, CASE 318 ISSUE AU, Unit: mm)

Dimension	Minimum	Nominal	Maximum
A (Package Height)	0.89	1.00	1.11
A1 (Lead Protrusion Below Seating Plane)	0.01	0.06	0.10
b (Lead Width)	0.37	0.44	0.50
C (Lead Thickness)	0.08	0.14	0.20
D (Package Length)	2.80	2.90	3.04
E (Package Width)	1.20	1.30	1.40
e (Lead Pitch)	1.78	1.90	2.04
L (Lead Length)	0.30	0.43	0.55
L1 (Lead Length from Package Body)	0.35	0.54	0.69
HE (Overall Height)	2.10	2.40	2.64
Notes	1. Dimensions D and E do not include mold flash, protrusions, or gate burrs. 2. Maximum lead thickness (C) includes lead finish; minimum value refers to base material thickness. 3. Dimensioning and tolerancing conform to relevant standards.

8. Recommended Mounting & Soldering

8.1 Mounting Footprint

Refer to the generic recommended mounting footprint for SOT−23 packages provided in the onsemi data sheet. For precise footprint design, follow the guidelines in the onsemi Soldering and Mounting Techniques Reference Manual (SOLDERRM/D).

8.2 Soldering Notes

The device is Pb-Free; use compatible soldering processes and materials.
For detailed soldering parameters (temperature profiles, dwell times, etc.), refer to SOLDERRM/D.
Ensure adequate PCB pad size per thermal characteristic requirements (Minimum Pad or 1.0 x 1.0 Inch Pad) to optimize heat dissipation.

9. Typical Characteristics (Refer to Data Sheet Figures)

Key typical performance curves (available in the original data sheet) include:

Figure 2: VCE(sat) vs. IC (Collector-Emitter Saturation Voltage vs. Collector Current)
Figure 3: DC Current Gain (hFE) vs. IC at different temperatures (-25°C, 25°C, 75°C)
Figure 4: Output Capacitance (Cob) vs. Reverse Voltage (VR)
Figure 5: Output Current (IC) vs. Input Voltage (Vin)
Figure 6: Input Voltage (Vin) vs. Output Current (IC)

10. Handling & Additional Information

10.1 Handling Precautions

Avoid exceeding maximum ratings to prevent device damage.
Store and handle the device within the specified junction and storage temperature range (-55°C to +150°C).
For Pb-Free soldering best practices, refer to SOLDERRM/D.

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