AT45DB641E-SHN-T Datasheet Summary

Overview

The AT45DB641E-SHN-T is a 64-Mbit DataFlash memory device with an additional 2-Mbit capacity, designed for various digital storage applications such as voice, image, program code, and data storage. It features a 1.7 V minimum supply voltage and is compatible with the Serial Peripheral Interface (SPI).

Features

• Supply Voltage: 1.7 V to 3.6 V
• Interface: SPI compatible, supporting modes 0 and 3
• Clock Frequency: Up to 85 MHz
• Low-Power Read Option: Up to 15 MHz
• Clock-to-Output Time: Maximum of 8 ns
• User Configurable Page Size: 256 or 264 bytes per page
• SRAM Data Buffers: Two fully independent buffers (256/264 bytes each)
• Programming Options: Byte/Page Program directly into main memory, Buffer Write, Buffer to Main Memory Page Program
• Erase Options: Page Erase, Block Erase, Sector Erase, Chip Erase
• Data Protection: Advanced hardware and software protection features, including individual sector protection and lockdown
• Security Features: 128-byte OTP Security Register with 64 bytes factory programmed and 64 bytes user programmable
• Power Dissipation: Ultra-Deep Power-Down current (400 nA typical), Deep Power-Down current (5 µA typical), Standby current (25 µA typical), Active Read current (7 mA typical)
• Endurance: 100,000 program/erase cycles per page minimum
• Data Retention: 20 years
• Temperature Range: Industrial (-40 °C to 85 °C)
• Packaging: 8-lead 208-mil wide SOIC

Ordering Information

• Ordering Code: AT45DB641E-SHN-T
• Package: 8-lead 208-mil wide, Plastic Gull Wing Small Outline (EIAJ SOIC)
• Lead Finish: NiPdAu
• Page Size: 264 bytes
• Operating Voltage: 1.7 V to 3.6 V
• Clock Frequency: 85 MHz
• Device Grade: Industrial (-40 °C to 85 °C)

Applications

The AT45DB641E-SHN-T is suitable for a wide range of applications requiring high-density, low-pin count, low-voltage, and low-power memory solutions. It is ideal for use in commercial and industrial applications where reliability and performance are critical.