Name: BCR%20519%20E6327
Brand: Infineon Technologies
SKU: JM-BCR%20519%20E6327
Availability: InStock

Infineon Technologies BCR 519 E6327

View All Single, Pre-Biased Bipolar Transistors by Infineon Technologies

Part Number:
BCR 519 E6327
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
BCR 519 E6327_Datesheet
Description:
TRANS PREBIAS NPN 50V SOT23
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Specifications

Type

Paramete

Type

Paramete

Current - Collector Cutoff (Max)

100nA (ICBO)

Transistor Type

NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 50mA, 5V

Resistor - Emitter Base (R2)

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

PG-SOT23

Current - Collector (Ic) (Max)

500 mA

Resistor - Base (R1)

4.7 kOhms

Grade

Power - Max

330 mW

Frequency - Transition

100 MHz

Qualification

Voltage - Collector Emitter Breakdown (Max)

50 V

Overview

DESCRIPTION

· NPN Silicon Digital Transistor with built-in bias resistor (R1=4.7 kΩ).

· Designed for switching, inverter, and driver circuits.

FEATURES

· Maximum collector-emitter voltage (VCEO) of 50 V.

· Maximum collector current (IC) of 500 mA.

· Total power dissipation (Ptot) of 330 mW at TS ≤ 79°C.

· Junction temperature (Tj) up to 150°C.

· Storage temperature (Tstg) range from -65°C to 150°C.

APPLICATIONS

· Suitable for switching circuits.

· Ideal for inverter circuits.

· Effective in driver circuits.

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Infineon Technologies BCR 519 E6327

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